The current and capacitance response of radiation-damaged silicon PIN diodes

S.J. Moloi; M. McPherson

首页> 外文期刊>Physica, B. Condensed Matter >The current and capacitance response of radiation-damaged silicon PIN diodes

【24h】

The current and capacitance response of radiation-damaged silicon PIN diodes

机译：辐射损坏的硅PIN二极管的电流和电容响应

获取原文

获取原文并翻译 | 示例

掌桥外文数据库（机构版） >>

开具论文收录证明 >>

文献代查 >>

页面导航

摘要
著录项
相似文献
相关主题

摘要

The current-voltage (I-V) and capacitance-voltage (C-V) characteristics of silicon p-i-n diodes havebeen investigated both prior to and after radiation-induced damage by 1 MeV neutrons. The resultshave been analysed and several rates of damage evaluated. The indication is mainly that radiationdamage occurs only up to certain fluencies. Beyond these, the material becomes resistant to furtherdamage. Thus, initial heavy radiation damage can be used to achieve radiation-hardness of detectordiodes. This result is contrary to previous suggestions that continued irradiation renders the detectorsinoperable but is in good agreement with our results on radiation-hardness induced by gold-doping.

机译：硅p-i-n二极管的电流-电压（I-V）和电容-电压（C-V）特性已经在1 MeV中子辐射诱发的损伤之前和之后进行了研究。分析了结果，并评估了几种损坏率。主要迹象是辐射损伤仅在达到一定通量时才会发生。除此之外，该材料还可以抵抗进一步的损坏。因此，最初的严重辐射损伤可用于实现检测二极管的辐射硬度。此结果与先前的建议相反，即连续照射会使检测器无法工作，但与我们对金掺杂引起的辐射硬度的结果非常吻合。

著录项

来源
《Physica, B. Condensed Matter》 |2009年第21期|共8页
作者
S.J. Moloi; M. McPherson;
展开▼
作者单位

展开▼
收录信息
原文格式 PDF
正文语种 eng
中图分类
关键词
Semiconductor; Silicon; Diode; Current; Capacitance;

机译：半导体;硅;二极管;电流;电容;

相似文献

外文文献
中文文献
专利

1. The current and capacitance response of radiation-damaged silicon PIN diodes [J] . S.J. Moloi, M. McPherson Physica, B. Condensed Matter . 2009,第21期

机译：辐射损坏的硅PIN二极管的电流和电容响应
2. Alpha-, boron-, silicon- and iron-ion-induced current transients in low-capacitance silicon and GaAs diodes [J] . Wagner R.S., Bordes N. IEEE Transactions on Nuclear Science . 1988,第6期

机译：低电容硅和GaAs二极管中α，硼，硅和铁离子感应的电流瞬变
3. Space charges and negative capacitance effect in organic light-emitting diodes by transient current response analysis [J] . Guan Min, Niu Litao, Zhang Yang, RSC Advances . 2017,第80期

机译：瞬态电流响应分析通过发光二极管的空间电荷和负电容效应
4. Current Density-Voltage and Capacitance-Voltage Characteristics of Pulsed Laser Deposited Nitrogen-Doped n-Carbon/p-Silicon Diode [C] . Islam, M.Z., Mominuzzaman, . 2006

机译：脉冲激光沉积氮掺杂n-碳/ p-硅二极管的电流密度-电压和电容-电压特性
5. DEVELOPMENT OF A DEEP TRAP MODEL FOR THE CAPACITANCE CHARACTERISTICS OF SILICON POSITIVE P - N - POSITIVE N DIODES IRRADIATED WITH FAST NEUTRONS [D] . CRABBE, JAMES STANLEY -1

机译：快中子辐照硅正P-N-正N二极管电容特性的深陷阱模型的建立。
6. Arsenic-Doped High-Resistivity-Silicon Epitaxial Layers for Integrating Low-Capacitance Diodes [O] . Agata Sakic, Tom L. M. Scholtes, Wiebe de Boer, 2011

机译：集成低电容二极管的掺砷高电阻率硅外延层
7. Capacitance spectroscopy in hydrogenated amorphous silicon Schottky diodes and high efficiency silicon heterojunction solar cells. [O] . MASLOVA Olga, KLEIDER Jean-Paul, TERUKOV Eugeniy 2013

机译：氢化非晶硅肖特基二极管和高效硅异质结太阳能电池的电容光谱。
8. Alpha, Silicon, and Iron Ion Induced Current Transients in Low Capacitance Silicon and GaAs Diodes. [R] . Wagner, R. S., Bordes, N., Bradley, J. M., 1988

机译：低电容硅和Gaas二极管中的α，硅和铁离子感应电流瞬变。

The current and capacitance response of radiation-damaged silicon PIN diodes

摘要

著录项

相似文献

相关主题

期刊订阅