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Nanointegration of ZnO with Si and SiC

机译：ZnO与Si和SiC的纳米集成

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The study is dedicated to some aspects of the controlled heteroepitaxial growth of nanoscaled ZnO structures and an investigation of their general and dimension mediated properties. ZnO nanostructures were synthesized by optimized MOCVD process via two growth approaches: (i) catalyst free self-organized growth of ZnO on Si substrates and (ii) ZnO heteroepitaxy on p-type hexagonal 4H-SiC substrates. The SiC substrate was prepared by sublimation epitaxy and served as a template for the ZnO epitaxial growth. The epitaxial growth of n-ZnO on p-SiC resulted in a regular matrix of well-faceted hexagonally shaped ZnO single crystals. The achievement of ZnO integration with Si encompasses controlled growth of vertically oriented nanosized ZnO pillars. The grown structures were characterized by transmission electron microscopy and microphotoluminescence. Low concentration of native defects due to a stoichiometry balance, advanced optical emission, (excitonic type near-band-edge emission and negligible defect related luminescence) and continuous interfaces (epitaxial relationship ZnO[0 0 0 1]/ SiC[0 0 0 1]) are evidenced. The ZnO nanopillars were further probed as field emitters: the grown structures exhibits advanced field emission properties, which are explained in term of dimensionality and spatial uniformity of the nanopillars. The present results contribute to understanding and resolving growth and device related issues of ZnO as a functional nanostructured material.
机译：这项研究致力于控制纳米级ZnO结构异质外延生长的某些方面，并研究它们的一般性质和尺寸介导的性质。 ZnO纳米结构是通过优化的MOCVD工艺通过两种生长方法合成的：（i）ZnO在Si衬底上无催化剂的自组织生长，以及（ii）在p型六角形4H-SiC衬底上的ZnO异质外延。通过升华外延制备SiC衬底，并用作ZnO外延生长的模板。在p-SiC上外延生长n-ZnO导致了规则面良好的六角形ZnO单晶矩阵。 ZnO与Si集成的实现包括垂直取向纳米ZnO柱的受控生长。通过透射电子显微镜和微光致发光来表征生长的结构。由于化学计量平衡，先进的光发射（激子型近带边发射和与缺陷相关的可忽略的发光）和连续界面（外延关系ZnO [0 0 0 1] / SiC [0 0 0 1] ]）被证明。 ZnO纳米柱被进一步探测为场发射器：生长的结构展现出先进的场发射特性，这在纳米柱的尺寸和空间均匀性方面得到了解释。本结果有助于理解和解决作为功能性纳米结构材料的ZnO的生长以及与器件有关的问题。

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