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首页> 外文期刊>Physica, B. Condensed Matter >Structural and luminescent characteristics of non-stoichiometric ZnO films by various sputtering and annealing temperatures
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Structural and luminescent characteristics of non-stoichiometric ZnO films by various sputtering and annealing temperatures

机译：各种溅射和退火温度下非化学计量ZnO薄膜的结构和发光特性

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摘要

ZnO thin films were prepared by reactive RF magnetron sputtering at various deposition temperatures. They were annealed in oxygen ambient at various annealing temperatures. The microstructures and photoluminescence characteristics of ZnO films were investigated. The grain size of the ZnO thin film that was deposited at room temperature (RT) after annealing exceeded that of the film that was deposited at 500 degrees C. Excess Zn atoms were considered to be present in the ZnO film that was deposited at RT, so the film was non-stoichiometric ZnO. No visible emission of either of the ZnO films deposited at the two temperatures was observed before annealing. Following annealing at high temperature, the green emission from the ZnO film that was deposited at RT was stronger than that of the film that was deposited at 500 degrees C. The relationship between the non-stoichiometry of the thin film and the visible emission was discussed. The luminescent centers that correspond to green emission are defects; the concentration of defects was higher in the ZnO thin film that was deposited at RT than in the film that was deposited at 500 degrees C. (C) 2007 Elsevier B.V. All rights reserved.
机译：ZnO薄膜是在不同的沉积温度下通过反应射频磁控溅射制备的。它们在各种退火温度的氧气环境中退火。研究了ZnO薄膜的微观结构和光致发光特性。退火后在室温（RT）沉积的ZnO薄膜的晶粒尺寸超过在500摄氏度下沉积的ZnO薄膜的晶粒尺寸。认为在RT沉积的ZnO薄膜中存在过量的Zn原子，因此薄膜是非化学计量的ZnO。在退火之前，没有观察到在两个温度下沉积的任何ZnO薄膜的可见光发射。在高温下退火之后，在室温下沉积的ZnO膜的绿色发射比在500摄氏度下沉积的膜的绿色发射更强。讨论了薄膜的非化学计量与可见发射之间的关系。 。与绿色发射相对应的发光中心是缺陷。在室温下沉积的ZnO薄膜中的缺陷浓度要比在500摄氏度下沉积的膜中的缺陷浓度高。（C）2007 Elsevier B.V.保留所有权利。

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