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首页> 外文期刊>Physica, B. Condensed Matter >Photoconductive studies on electron beam evaporated CdSe films
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Photoconductive studies on electron beam evaporated CdSe films

机译：电子束蒸发CdSe薄膜的光电导研究

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摘要

Thin CdSe films were electron beam evaporated. The CdSe powder synthesized in the laboratory by a chemical method was used as source for the deposition of films. Clean glass and titanium substrates were used as substrates. The substrate temperature was varied in the range of 30-250 degrees C. X-ray diffraction studies indicated polycrystalline hexagonal structure. The band gap was 1.65 eV. The grain size was 15-30 nm with increase of substrate temperature. Photoconductive cells fabricated with the doped and undoped films have exhibited high photosensitivity and high signal to noise ratio. The current voltage characteristics were linear.
机译：电子束蒸发了薄的CdSe薄膜。通过化学方法在实验室中合成的CdSe粉末被用作沉积膜的来源。干净的玻璃和钛基底用作基底。基板温度在30-250℃的范围内变化。X射线衍射研究表明多晶六方结构。带隙为1.65 eV。随着衬底温度的升高，晶粒尺寸为15-30nm。用掺杂膜和未掺杂膜制造的光电导电池表现出高光敏性和高信噪比。当前的电压特性是线性的。

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