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首页> 外文期刊>Physica, B. Condensed Matter >Microscopic observation of vacancy and self-interstitial and the formation of Frenkel pairs in InSb by M¨ossbauer spectroscopy
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Microscopic observation of vacancy and self-interstitial and the formation of Frenkel pairs in InSb by M¨ossbauer spectroscopy

机译：莫斯鲍尔光谱显微镜观察InSb中的空位和自间隙以及Frenkel对的形成

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摘要

The process of Frenkel pair formation in n-InSb is investigated by application of Mossbauer spectroscopy with correlated Frenkel pair production utilizing the Mossbauer probe 119Sb/119Sn as primary knock-on atom (PKA). This is achieved by starting the Mossbauer decay chain on the precursor 119gTe which feeds the "proper" standard probe 119Sb/119Sn and in this process emits a high energy neutrino which leads to 12 eV monoenergetic recoil energy exerted on the Mossbauer probe. Since thedefect production threshold in InSb is about 8 eV, single Frenkel pairs consisting of one vacancy and one self-interstitial can be expected. This simplest possible defect creation mechanism indeed enables identification of two single vacancy-probe configurations and the probe as self-interstitial thereby elucidating the mechanism of defect formation itself. The relative intensities of the defect fractions corrected for the radioactive decay show that about 55–60% of the Mossbauer probes are associated with a defect. The probability of producing a probe associated vacancy does not depend on temperature between 4 and 300 K. First experiments searching for a doping dependence indicate that in p-type material the probe associated vacancy fractions are not formed.
机译：利用Mossbauer光谱技术，利用Mossbauer探针119Sb / 119Sn作为初级敲除原子（PKA），通过相关的Frenkel对生产，研究了n-InSb中Frenkel对的形成过程。这是通过在前体119gTe上启动Mossbauer衰变链来实现的，前驱体119gTe向“适当”标准探针119Sb / 119Sn供料，并在此过程中释放出高能中微子，导致施加在Mossbauer探针上的12 eV单能反冲能量。由于InSb中的缺陷产生阈值约为8 eV，因此可以预期由一个空位和一个自填隙组成的单个Frenkel对。实际上，这种最简单的可能的缺陷生成机制确实可以识别两个单个的空探针配置，并且探针可以自我插入，从而阐明了缺陷形成本身的机制。校正了放射性衰变的缺陷分数的相对强度表明，约55-60％的Mossbauer探针与缺陷有关。产生与探针相关的空位的概率不依赖于4到300 K之间的温度。寻找掺杂依赖性的第一个实验表明，在p型材料中未形成与探针相关的空位分数。

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