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首页> 外文期刊>Physica, B. Condensed Matter >Influence of Ge nanocrystals and radiation defects on C–V characteristics in Si-MOS structures
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Influence of Ge nanocrystals and radiation defects on C–V characteristics in Si-MOS structures

机译：Ge纳米晶体和辐射缺陷对Si-MOS结构C–V特性的影响

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Metal–oxide-semiconductor (MOS) structures containing ~(74)Ge nanocrystals (NC-Ge) imbedded inside the SiO_2 layer were studied for their capacitance characterization. Ge atoms were introduced by implantation of ~(74)Ge~+ ions with energy of 150 keV into relatively thick (～640 nm) amorphous SiO_2 films. The experimental characterization included room temperature measurements of capacitance-voltage (C–V) dependences at high frequencies (100 kHz and 1MHz). Four groups of MOS structures have been studied: The 1st-"Initial" samples, without Ge atoms(before ion implantation). The 2nd-"implanted" samples, after Ge~+ ion implantation but beforeannealing, with randomly distributed Ge atoms within the struggle layer. The 3rd-samples after formation of Ge nanocrystals by means of annealing at 800 1C ("NC-Ge" samples), and the 4th-"final"samples: NC-Ge samples that were subjected by an intensive neutron irradiation in a research nuclear reactor with the integral dose up to 10~(20) neutrons/cm~2 followed by the annealing of radiation damage.It is shown that in "initial"samples, the C–V characteristics have a step-like form or "S-shape",which is typical for MOS structures in the case of high frequency. However, in "implanted" and "NC-Ge"samples, C–V characteristics have "U-shape" despite the high frequency operation. In addition, "NC-Ge"samples exhibit a large hysteresis which may indicate charge trapping at the NC-Ge. Combination of the"U-shape" and hysteresis characteristics allows us to suggest a novel 4-digits memory retention unit."Final" samples indicate destruction of the observed peculiarities of C–V characteristics and recurrence to the C–V curve of "initial" samples.
机译：研究了包含〜（74）Ge纳米晶体（NC-Ge）的金属氧化物半导体（MOS）结构，该结构嵌入在SiO_2层内。通过将能量为150keV的〜（74）Ge〜+离子注入到相对较厚（〜640 nm）的非晶SiO_2薄膜中，引入Ge原子。实验特性包括在室温下测量高频（100 kHz和1MHz）下电容-电压（C–V）的依赖性。已经研究了四组MOS结构：第一个“初始”样品，不含Ge原子（离子注入之前）。第二种“注入”样品在Ge〜+离子注入之后但在退火之前，在挣扎层内随机分布有Ge原子。通过在800 1C下退火形成Ge纳米晶体后的第三个样品（“ NC-Ge”样品）和第四个“最终”样品：在研究核中经过强中子辐照的NC-Ge样品反应堆的总剂量高达10〜（20）中子/ cm〜2，然后进行辐射损伤退火。研究表明，在“初始”样品中，C–V特性呈阶梯状或“ S-形状”，这是高频情况下MOS结构的典型特征。但是，在“植入”和“ NC-Ge”样品中，尽管高频操作，但C–V特性仍具有“ U形”。另外，“ NC-Ge”样品表现出较大的磁滞现象，这可能表明电荷在NC-Ge处被俘获。 “ U形”和滞后特性的组合使我们可以提出一个新颖的4位数字记忆保持单元。“最终”样本表明破坏了所观察到的C–V特性并恢复了“初始”的C–V曲线”样本。

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