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首页> 外文期刊>Physica, B. Condensed Matter >Current-voltage behaviour of Schottky diodes fabricated on p-type silicon for radiation hard detectors
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Current-voltage behaviour of Schottky diodes fabricated on p-type silicon for radiation hard detectors

机译：用于辐射硬探测器的p型硅上制造的肖特基二极管的电流-电压行为

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摘要

Current-voltage (I-V) measurements were carried out on Schottky diodes fabricated on undoped and on metal-doped p-type silicon. The metals used are gold, platinum, erbium and niobium. The I-V data were used to extract the saturation current, the ideality factor and the Schottky barrier height for each of the five diodes. These parameters were correlated to the defect levels generated by the metals in silicon. The results show that in all cases the silicon has become relaxation-like after doping since the device current is Ohmic. This is in agreement with the existence of the midgap defect in all the doped devices as compiled from the literature. Such metal doped (or relaxation) devices have been found to perform better as radiation-hard particle detectors.
机译：电流-电压（I-V）测量是在未掺杂和金属掺杂的p型硅上制造的肖特基二极管上进行的。所使用的金属是金，铂、,和铌。 I-V数据用于提取五个二极管中每个二极管的饱和电流，理想因子和肖特基势垒高度。这些参数与硅中金属产生的缺陷水平相关。结果表明，在所有情况下，由于器件电流为欧姆，所以硅在掺杂后都变为弛豫状。这与根据文献汇编的所有掺杂器件中存在中间能隙缺陷是一致的。已经发现，这种金属掺杂（或弛豫）装置作为抗辐射粒子探测器性能更好。

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