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首页> 外文期刊>Physica, B. Condensed Matter >Characteristic properties of Y2SiO5:Ce thin films grown with PLD
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Characteristic properties of Y2SiO5:Ce thin films grown with PLD

机译：PLD生长的Y2SiO5：Ce薄膜的特性

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摘要

Three different gases (nitrogen (N-2), oxygen (O-2) and argon (At)) were used as background gases during the growth of pulsed laser deposition (PLD) Y2SiO5:Ce thin films. A Krypton fluoride laser (KrF), 248 nm was used for the PLD of the films on silicon (Si) (10 0) substrates. The effect of the background gases on the surface morphology, crystal growth and luminescent properties were investigated. All the experimental parameters, the gas pressure (455 mT), the substrate temperature (600 degrees C), the pulse frequency (8 Hz), the number of pulses (4000) and the laser fluence (1.6 +/- 0.2)J/cm(2) were kept constant. The only parameter that was changed during the deposition was the ambient gas species. The surface morphology and average particle sizes were monitored with scanning electron microscopy (SEM) and atomic force microscopy (AFM). X-ray diffraction (XRD) and Auger electron spectroscopy (AES) were used to determine the crystal structure and composition, respectively. Cathodo- (CL) and photoluminescence (PL) were used to measure the luminescent intensities for the different phosphor thin films. The nature of the particles, ablated on the substrate, is related to the collisions between the ejected particles and the ambient gas particles. The CL and PL intensities also depend on the particle sizes. A 144 h (coulomb dose of 1.4 x 10(4) C cm(-2)) electron degradation study on the thin films ablated in the At gas environment resulted in a decrease in the main CL intensity peak at 440 nm and to the development of a new very broad luminescent peak spectra ranging from 400 to 850 nm due to the growth of a SiO2 layer on the surface.
机译：在脉冲激光沉积（PLD）Y2SiO5：Ce薄膜的生长过程中，将三种不同的气体（氮气（N-2），氧气（O-2）和氩气（At））用作背景气体。 248 nm的氟化rypto激光（KrF）用于硅（Si）（10 0）衬底上的薄膜的PLD。研究了背景气体对表面形态，晶体生长和发光性能的影响。所有实验参数，气压（455 mT），基板温度（600摄氏度），脉冲频率（8 Hz），脉冲数（4000）和激光通量（1.6 +/- 0.2）J / cm（2）保持恒定。在沉积过程中唯一改变的参数是环境气体种类。用扫描电子显微镜（SEM）和原子力显微镜（AFM）监测表面形态和平均粒度。 X射线衍射（XRD）和俄歇电子能谱（AES）分别用于确定晶体结构和组成。 Cathodo-（CL）和光致发光（PL）用于测量不同荧光粉薄膜的发光强度。烧蚀在基板上的粒子的性质与所喷射的粒子与周围气体粒子之间的碰撞有关。 CL和PL强度还取决于粒径。对在At气体环境中烧蚀的薄膜进行的144小时（库仑剂量1.4 x 10（4）C cm（-2）的电子降解）研究导致440 nm处的主要CL强度峰减小，并发展到由于表面上SiO2层的生长，产生了一个新的非常宽的发光峰光谱，范围在400至850 nm之间。

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