Temperature variation of the fundamental absorption edge in AgGaSe_2

E. Calderon; B. Fernandez; L. Duran; P. Grima; M. Morocoima; E. Quintero; C. Rincon; M. Quintero

首页> 外文期刊>Physica, B. Condensed Matter >Temperature variation of the fundamental absorption edge in AgGaSe_2

【24h】

Temperature variation of the fundamental absorption edge in AgGaSe_2

机译：AgGaSe_2中基本吸收边的温度变化

获取原文

获取原文并翻译 | 示例

掌桥外文数据库（机构版） >>

开具论文收录证明 >>

文献代查 >>

页面导航

摘要
著录项
相似文献
相关主题

摘要

Optical absorption measurements were made in the temperature range 9-300 K on the chalcopyritesemiconductor compound AgGaSe2 and the optical energy gap EG determined as a function oftemperature T. In order to obtain the values of EG as a function of T, the Elliot-Toyozawa model [R.J. Elliot,J. Phys. Rev. 108 (1957) 1384; D.D. Sell, P. Lawaets, Phys. Rev. Lett. 26 (1971) 311] was employed toperform the analysis of the optical absorption spectra. The resulting EG vs. T curve was fitted to a semi-empirical model that takes into account both the thermal expansion and the electron-phononinteraction contributions. The results have been used to estimate values of the deformation potentials ofthe valence and conduction bands of the compound.

机译：在黄铜矿半导体化合物AgGaSe2上在9-300 K的温度范围内进行了光吸收测量，并确定了光能隙EG与温度T的关系。为了获得EG与T的关系，Elliot-Toyozawa模型[RJ艾略特，J。物理Rev.108（1957）1384; D.D.出售，体育律师，物理。牧师26（1971）311]被用来进行光吸收光谱的分析。所得的EG与T曲线拟合为半经验模型，该模型考虑了热膨胀和电子-声子相互作用的影响。该结果已用于估计化合物的价态和导带的变形势的值。

著录项

来源
《Physica, B. Condensed Matter》 |2009年第21期|共5页
作者
E. Calderon; B. Fernandez; L. Duran; P. Grima; M. Morocoima; E. Quintero; C. Rincon; M. Quintero;
展开▼
作者单位

展开▼
收录信息
原文格式 PDF
正文语种 eng
中图分类
关键词
Semiconductor materials; Chalcopyrite compounds; Optical absorption; Energy gap;

机译：半导体材料;黄铜矿化合物;光吸收;能隙;

相似文献

外文文献
中文文献
专利

1. Temperature variation of the fundamental absorption edge in AgGaSe_2 [J] . E. Calderon, B. Fernandez, L. Duran, Physica, B. Condensed Matter . 2009,第21期

机译：AgGaSe_2中基本吸收边的温度变化
2. The fundamental absorption edge of high crystalline quality GaN and that of amorphous GaN grown at low temperature [J] . P. Trautman, K. Pakuta, J. M. Baranowski Physica Status Solidi. C, Conferences and critical reviews . 2005,第3期

机译：在低温下生长的高质量晶体GaN和非晶GaN的基本吸收边缘
3. The influence of vacuum annealing temperature on the fundamental absorption edge and structural relaxation of a-SiC : H films [J] . Vasin AV, Rusavsky AV, Lysenko VS, Semiconductors . 2005,第5期

机译：真空退火温度对a-SiC：H薄膜基本吸收边和结构弛豫的影响
4. Excitonic absorption and emission in diamond near the edge of fundamental absorption [C] . E.I. Lipatov, K.R. Burumbayeva, D.E. Genin, International Conference on Atomic and Molecular Pulsed Lasers . 2017

机译：金刚石在基波吸收边缘附近的激子吸收和发射
5. The variation, with concentration and temperature, of the absorption, in aqueous solutions, of electromagnetic waves at ultra high frequencies. [D] . Smith, Vera. 1956

机译：水溶液中超高频电磁波的吸收随浓度和温度的变化。
6. Light-Induced Relaxation of Photolyzed Carbonmonoxy Myoglobin: A Temperature-Dependent X-Ray Absorption Near-Edge Structure (XANES) Study [O] . A. Arcovito, D. C. Lamb, G. U. Nienhaus, 2005

机译：光诱导的碳氧烷氧基肌红蛋白的弛豫：温度依赖的X射线吸收近边缘结构（XANES）研究。
7. Temperature dependence of the pre-edge structure in the Ti K-edge x-ray absorption spectrum of rutile [O] . Durmeyer Olivier, Beaurepaire Eric, Kappler Jean-Paul, 2010

机译：金红石型Ti K边缘x射线吸收光谱中前缘结构的温度依赖性
8. The Optical Absorption Edge in the Lead Salts and Its Variation with Temperature and Pressure [R] . Prakash, V. 1967

机译：铅盐中的光吸收边及其随温度和压力的变化

Temperature variation of the fundamental absorption edge in AgGaSe_2

摘要

著录项

相似文献

相关主题

期刊订阅