...
首页> 外文期刊>Physica, B. Condensed Matter >Terahertz pulse emission from semiconductor surfaces illuminated by femtosecond Yb:KGW laser pulses
【24h】

Terahertz pulse emission from semiconductor surfaces illuminated by femtosecond Yb:KGW laser pulses

机译:飞秒Yb:KGW激光脉冲照射的半导体表面的太赫兹脉冲发射

获取原文
获取原文并翻译 | 示例
           

摘要

The amplitudes of terahertz pulses emitted from the surfaces of InAs, InSb, InGaAs, GaAs and Ge after their excitation by femtosecond 1 mu m laser pulses was compared. It has been found that this effect is most efficient in p-type InAs. The mechanisms leading to the terahertz emission are investigated and discussed. It has been concluded that in the majority of the investigated semiconductors the main contribution to THz pulse emission comes from the electrical-field-induced optical rectification effect.
机译:比较了飞秒1μm激光脉冲激发的InAs,InSb,InGaAs,GaAs和Ge表面发射的太赫兹脉冲的幅度。已经发现,这种效应在p型InAs中是最有效的。研究和讨论了导致太赫兹发射的机理。已经得出的结论是,在大多数研究的半导体中,对THz脉冲发射的主要贡献来自电场感应的光整流效应。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号