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Effects of processing on the electrical and structural properties of spray deposited CdS:In thin films

机译：工艺对喷雾沉积CdS的电学和结构性能的影响

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摘要

Polycrystalline CdS:In thin films were prepared by the Spray pyrolysis technique (SP) at a substrate temperature T-s = 490 degrees C. The effects of annealing in nitrogen atmosphere at 400 degrees C and HCl-etching on the electrical and structural properties of the films were investigated. The electrical properties were studied through the analysis of the I-V curves, while the structural properties were studied through the analysis of the X-ray diffraction (XRD) patterns and the scanning electron microscope (SEM) images. An increase in the films' resistivity was occurred after annealing and/or HCl-etching, which was accompanied by changes in the XRD patterns and SEM images. These changes were related to a phase change from the mixed (cubic and hexagonal) phase to the hexagonal phase which was expected to occur during the aforementioned processes. The X-ray diffraction (XRD) patterns and the scanning electron microscope images confirm this expectation.
机译：多晶CdS：在薄膜中通过喷雾热解技术（SP）在基底温度Ts = 490摄氏度下制备。在氮气氛中以400摄氏度退火和HCl蚀刻对薄膜的电学和结构性质的影响被调查了。通过分析I-V曲线来研究电性能，同时通过分析X射线衍射（XRD）图和扫描电子显微镜（SEM）图像来研究结构性能。退火和/或HCl蚀刻后，膜的电阻率增加，这伴随着XRD图案和SEM图像的变化。这些变化与从混合（立方和六方）相到六方相的相变有关，该相变预期在上述过程中发生。 X射线衍射（XRD）图案和扫描电子显微镜图像证实了这一期望。

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