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首页> 外文期刊>Physica, B. Condensed Matter >Stability of neutral and negative donor impurity in a semiconductor cylindrical quantum dot
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Stability of neutral and negative donor impurity in a semiconductor cylindrical quantum dot

机译：半导体圆柱量子点中中性和负性施主杂质的稳定性

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摘要

The stability of neutral (D-0) and negative charged donor (D-) on- and off-center in anisotropic cylindrical quantum dot (CQD) is studied by use of a variational approach. Two-parameter anisotropic trial wave function which includes electron-correlation effects is utilized, to explore strong and weak confinement regions. A comparison between one and two-parameter trial wave functions results is introduced. The finite barrier height and the CQD dimensions, dependence of the "stability and the binding energy" of the D-0 and the D- is obtained. It has been shown that the donor's stability dependent on CQD dimensions and the confinement potential in strong confinement region but in weak confinement region, the stability of D-0 and D- is dependent strongly on the quantum dot (QD) radius R. It has been found that the donors D-0 and D- off-center are less stable than the on-center impurities, and also the off-center donors more stable in small CQDs. It has shown that the stability of D- depends on the energy of the excess electron.
机译：通过使用变分方法研究了各向异性圆柱量子点（CQD）中心和中心偏心的中性（D-0）和带负电的施主（D-）的稳定性。利用包含电子相关效应的两参数各向异性试验波函数，探索了强约束区域和弱约束区域。介绍了一参数和两参数试验波函数结果的比较。获得有限的势垒高度和CQD尺寸，以及D-0和D-的“稳定性和结合能”的依赖性。结果表明，供体的稳定性取决于CQD尺寸和强约束区的约束电位，而在弱约束区，D-0和D-的稳定性主要取决于量子点（QD）半径R。据发现，供体D-0和D-中心偏心的稳定性低于中心杂质，并且偏心施主在小型CQD中更稳定。已经表明，D-的稳定性取决于过量电子的能量。

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