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Raman investigation of low temperature AlGaAs/GaAs(100) heterostructures

机译:低温AlGaAs / GaAs(100)异质结构的拉曼研究

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摘要

Method of Raman backscattering allowed one to study the substructure of epitaxial low temperature MOCVD AlGaAs/GaAs(1 0 0) heterostructures. It is shown that experimental data received during work correlate with results of the structural researches accomplished in the previous work. The assumption that at high concentration of a carbon acceptor atoms concentrate on defects of a crystal lattice of AlGaAs solid solution with formation of carbon nanoclusters is confirmed.
机译:拉曼背散射法使人们能够研究外延低温MOCVD AlGaAs / GaAs(1 0 0)异质结构的子结构。结果表明,在工作期间收到的实验数据与先前工作中完成的结构研究的结果相关。证实了在高浓度的碳受体原子集中在AlGaAs固溶体的晶格缺陷上并形成了碳纳米团簇的假设。

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