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首页> 外文期刊>Physica, B. Condensed Matter >Electronic and annealing properties of the E-0.31 defect introduced during Ar plasma etching of germanium
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Electronic and annealing properties of the E-0.31 defect introduced during Ar plasma etching of germanium

机译：Ar等离子体刻蚀锗时引入的E-0.31缺陷的电子和退火性能

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摘要

Low energy (+/- 80 eV) Ar plasma etching has been successfully used to etch several semiconductors, including GaAs, GaP, and InP. We have studied the only prominent defect, E-0.31, introduced in n-type Sb-doped Ge during this process by deep level transient spectroscopy (DLTS). The E-0.31 defect has an energy level at 0.31 eV below the conduction band and an apparent capture cross-section of 1.4 x 10(-14) cm(2). The fact that no V-Sb defects and no interstitial-related defects were observed implies that the etch process did not introduce single vacancies or single interstitials. Instead it appears that higher order vacancy or interstitial clusters are introduced due to the large amount of energy deposited per unit length along the path of the Ar ions in the Ge. The E-0.31 defect may therefore be related to one of these defects. DLTS depth profiling revealed the E-0.31 concentration had a maximum (6 x 10(13) cm(-3)) close to the Ge surface and then it decreased more or less exponentially into the Ge. Finally, annealing at 250 degrees C reduced the E-0.31 concentration to below the DLTS detection limit.
机译：低能量（+/- 80 eV）Ar等离子蚀刻已成功用于蚀刻多种半导体，包括GaAs，GaP和InP。我们已经通过深能级瞬态光谱法（DLTS）研究了在此过程中引入n型掺Sb的Ge中唯一突出的缺陷E-0.31。 E-0.31缺陷的能级为导带以下的0.31 eV，表观捕获截面为1.4 x 10（-14）cm（2）。没有观察到V-Sb缺陷和与填隙有关的缺陷，这一事实意味着蚀刻工艺没有引入单个空位或单个填隙。相反，由于沿Ge中Ar离子的路径每单位长度沉积了大量的能量，因此似乎引入了更高级别的空位或间隙簇。因此，E-0.31缺陷可能与这些缺陷之一有关。 DLTS深度剖析显示，E-0.31浓度在接近Ge表面的位置具有最大值（6 x 10（13）cm（-3）），然后它或多或少地成指数地下降到Ge中。最终，在250摄氏度下退火将E-0.31浓度降低到DLTS检测极限以下。

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