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首页> 外文期刊>Physica, B. Condensed Matter >Electrical conductivity and minority carrier diffusion in thermally oxidized PbTe thin films
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Electrical conductivity and minority carrier diffusion in thermally oxidized PbTe thin films

机译：热氧化PbTe薄膜的电导率和少数载流子扩散

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摘要

Thermally oxidized 0.1 and 1 mu m thick n-type PbTe:In films were studied in this work. Two main processes induced during the thermal treatment in oxygen atmosphere were identified. These are the formation of an oxide phase on the surface and generation of acceptor states of oxygen along grain boundaries inside a film. The latter process causes inversion of the type of electrical conductivity in PbTe from n to p. Electron beam-induced current (EBIC) measurements of minority electron diffusion length in oxidized 0.1 mu m, thick PbTe:In film showed diffusion length increase with increasing temperature similar to the wide band gap semiconductors.
机译：本文研究了热氧化0.1微米和1微米厚的n型PbTe：In薄膜。确定了在氧气气氛中热处理期间引起的两个主要过程。这些是在表面上形成氧化物相并沿着膜内部的晶界产生氧的受体态。后一过程导致PbTe中电导率的类型从n反转为p。与宽带隙半导体类似，在氧化的0.1微米厚PbTe：In薄膜中，电子束感应电流（EBIC）测量的少数电子扩散长度显示出扩散长度随温度升高而增加。

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