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首页> 外文期刊>Physica, B. Condensed Matter >Preparation of c-axis textured SrTiO3 thin films on Si(100) substrates by pulsed laser deposition process
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Preparation of c-axis textured SrTiO3 thin films on Si(100) substrates by pulsed laser deposition process

机译：通过脉冲激光沉积工艺在Si（100）衬底上制备c轴织构SrTiO3薄膜

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摘要

Highly c-axis textured SrTiO3 (STO) thin films were directly grown on Si(1 0 0) substrates by XeCl excimer pulsed laser deposition technique without the utilization of buffer layer. Among the important deposition parameters, the substrate temperature, oxygen pressure, and target-to-substrate distance imposed most significant effect on the c-axis preferred orientation characteristics of the STO thin films. For the optimum deposition parameters such as substrate temperature of 700 degrees C. oxygen pressure of 6.67 x 10(-2) mbar and target-to-substrate distance of 35 mm, the full width at half maximum intensity (FWHM) of STO(0 0 2) XRD peak was 0.42 degrees. The FWHM of STO(0 0 2) peak was further reduced to 0.35 degrees and 0.32 degrees via. post-treatment with rapid thermal annealing (RTA at 800 degrees C for 30s) and furnace annealing process (at 1000 degrees C for 1.5 h), respectively. The STO/Si films thus obtained are suitable for the synthesis of perovskite ferroelectric thin films.
机译：通过XeCl准分子脉冲激光沉积技术，在不使用缓冲层的情况下，将高c轴织构的SrTiO3（STO）薄膜直接生长在Si（1 0 0）衬底上。在重要的沉积参数中，衬底温度，氧气压力和目标到衬底的距离对STO薄膜的c轴首选取向特性产生最大影响。对于最佳沉积参数，例如衬底温度为700摄氏度，氧气压力为6.67 x 10（-2）mbar，目标到衬底的距离为35 mm，STO（0）的半高全宽（FWHM） 0 2）XRD峰为0.42度。 STO（0 0 2）峰的半峰宽进一步减小为0.35度和0.32度。快速热退火（RTA在800摄氏度下进行30秒）和炉内退火工艺（在1000摄氏度下进行1.5小时）进行后处理。如此获得的STO / Si膜适用于钙钛矿铁电薄膜的合成。

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