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首页> 外文期刊>Physica, B. Condensed Matter >Aggregation performance of CdO grains grown on surface of N 〈1 0 0〉 silicon crystal
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Aggregation performance of CdO grains grown on surface of N 〈1 0 0〉 silicon crystal

机译：在N 〈1 0 0〉硅晶体表面生长的CdO晶粒的聚集性能

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摘要

Four kinds of aggregation patterns of CdO grains were formed on the surface of N 〈1 0 0〉 silicon substrate heated at 580 °C for 1 h in an evaporationdeposition device. They were ellipse-shaped or quasi-circular-shaped aggregate, long ribbon-shaped aggregate, long chain-shaped or long double-chain-shaped aggregate, and long ellipse-chain-shaped aggregate. These aggregates consisted of numerous grains or tiny crystals, and deposited on top of the CdO bush-like long crystal clusters grown earlier. They exhibited clearly spontaneous self-organization aggregation performance. Surface defects of the virgin N 〈1 0 0〉 silicon crystal were analyzed, and mechanism of the self-organization aggregation was discussed with a defect induced aggregation (DIA) model.
机译：在蒸发沉积装置中于580°C加热1 h的N 〈1 0 0〉硅衬底表面上形成了四种CdO晶粒聚集模式。它们是椭圆形或准圆形的聚集体，长带状的聚集体，长链形的或长双链形的聚集体以及长椭圆形的聚集体。这些聚集体由许多晶粒或微小晶体组成，并沉积在较早生长的CdO丛状长晶体簇的顶部。它们表现出明显的自发自组织聚集性能。分析了原始N 〈1 0 0〉硅晶体的表面缺陷，并利用缺陷诱导聚集（DIA）模型讨论了自组织聚集的机理。

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