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首页> 外文期刊>Physica, B. Condensed Matter >Intrinsic embrittlement of MoSi2 and alloying effect on ductility: Studied by first-principles
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Intrinsic embrittlement of MoSi2 and alloying effect on ductility: Studied by first-principles

机译:MoSi2的内在脆化和合金化对延展性的影响:第一性原理研究

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The electronic structure, surface energy (gamma(s)), unstable stacking fault energy (gamma(us)), and the elastic parameters of MoSi2 and (Mo,M)Si-2 (M = Nb, Tc, Ta, W) are calculated using first-principles method. The influence of alloying elements on ductility is assessed by combining a "disembrittlement parameter" D-gamma(x)/gamma(us) and elastic properties. Ideal MoSi2 Crystal investigation shows that the intrinsic brittlement is caused by strong directional covalent Mo4d-Si3p bonding. MoSi2 (001) Si-vertical bar-Si plane, which has lower surface energy is preferred cleavage plane. W alloying embrittles MOSi2. Nb, Tc, and Ta alloying are found to be beneficial to the enhancement of ductility. The softening effect can be interpreted by the replacement of Mo4d-Si3p bonding by weaker and less directional bonding.
机译:电子结构,表面能(gamma),不稳定堆垛层错能(gamma(us))以及MoSi2和(Mo,M)Si-2的弹性参数(M = Nb,Tc,Ta,W)使用第一原理方法计算。合金元素对延展性的影响是通过结合“解禁参数”D-γ(x)/γ(us)和弹性特性来评估的。理想的MoSi2晶体研究表明,固有脆性是由强方向性共价Mo4d-Si3p键引起的。具有较低表面能的MoSi 2(001)Si-垂直条-Si平面是优选的解理平面。 W合金脆化MOSi2。 Nb,Tc和Ta合金化被发现有助于延展性的提高。可以通过用较弱且定向性较小的键代替Mo4d-Si3p键来解释软化效果。

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