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Electric field doping of few-layer graphene

机译：多层石墨烯的电场掺杂

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We report on magneto-transport and quantum Hall effect measurements in a few-layer graphene sample in magnetic fields up to 55T applied perpendicular to the layers. Few-layer graphene systems consist of several planes of carbon atoms and exhibit complex electronic band structures. Regarding their transport properties, they are natural candidates to study the cross over from 3D graphite to 2D graphene. The sample, obtained by micro-mechanical exfoliation of graphite, displays a p-type conductivity that was tuned by the application of a back gate voltage. The Hall and longitudinal resistances were simultaneously recorded and analyzed. We find evidences of two regimes of charge carrier dynamics driven by massive and Dirac fermions, respectively, depending on the gate voltage. The Dirac fermion signatures are observed from 2 to 120 K.
机译：我们报告了在垂直于各层垂直施加的高达55T的磁场中，在几层石墨烯样品中的磁传输和量子霍尔效应测量结果。几层石墨烯系统由几个碳原子平面组成，并表现出复杂的电子能带结构。关于它们的传输特性，它们是研究从3D石墨到2D石墨烯的过渡的自然候选者。通过石墨的微机械剥落获得的样品显示出p型电导率，该电导率通过施加背栅电压进行调节。同时记录和分析霍尔和纵向电阻。我们发现了分别由大量和狄拉克费米子驱动的两种电荷载流子动力学的证据，这取决于栅极电压。在2至120 K范围内观察到狄拉克费米子特征。

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