Structural and electronic properties of amorphous InSb from first principles study

Wang L; Chen XS; Huang Y; Lu W; Zhao JJ

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Structural and electronic properties of amorphous InSb from first principles study

机译：通过第一性原理研究非晶InSb的结构和电子性质

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The model for amorphous semiconductor InSb (a-InSb) was constructed through the first principles calculations, based on the idea of "continuous random networks" (CRN). The results of structural parameters for a-InSb are in agreement with the available data both theoretically and experimentally. The structure of a-InSb is almost tetrahedrally bonded with a perfect average coordination number of four. Due to the influence of the disorders, the density of states for a-InSb has the smearing structure in contrast to crystalline InSb (c-InSb). As a consequence of the induction of disorders, modification phenomena occur at the band edge of a-InSb in contrast to that of c-InSb.

机译：基于“连续随机网络”（CRN）的思想，通过第一原理计算，构建了非晶半导体InSb（a-InSb）模型。 a-InSb的结构参数结果与现有数据在理论上和实验上都一致。 a-InSb的结构几乎是四面体键合，完美的平均配位数为4。由于疾病的影响，a-InSb的态密度与晶体InSb（c-InSb）相比具有拖尾结构。作为诱发疾病的结果，与c-InSb的带边缘相反，在a-InSb的带边缘发生修饰现象。

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《Physica, B. Condensed Matter》 |2010年第10期|共4页
作者
Wang L; Chen XS; Huang Y; Lu W; Zhao JJ;
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正文语种 eng
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关键词
Amorphous semiconductor; Coordination number; Density of states; Modification phenomenon;

机译：非晶半导体配位数态密度修饰现象;

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Structural and electronic properties of amorphous InSb from first principles study

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