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首页> 外文期刊>Physica, B. Condensed Matter >Structural and optical properties of Cd_(1-x)Sn_xS semiconductor films produced by the ultrasonic spray pyrolysis method
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Structural and optical properties of Cd_(1-x)Sn_xS semiconductor films produced by the ultrasonic spray pyrolysis method

机译：超声喷雾热解法制备Cd_（1-x）Sn_xS半导体薄膜的结构和光学性质

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摘要

Cd_(1-x)Sn_xS semiconductor films have been produced onto glass substrates at 573 K substrate temperature by the ultrasonic spray pyrolysis (USP) method using an aqueous solution with varying tin concentrations. The thicknesses of the films have been calculated to be in the range of 14 μm. The films have been characterized to evaluate the structure, morphology, composition and optical energy band gap. X-ray diffraction (XRD) studies show that the films are polycrystalline with hexagonal, tetragonal and orthorhombic structures. The morphological and compositional properties of the films have been investigated using scanning electron microscopy (SEM) and energy dispersive spectroscopy (EDS). Sn concentrations in the films have been varied from 0% to 84% as determined from energy dispersive analysis. The optical band gap energies and types of optical transition of the films have been determined from the optical transmittance spectra. The optical band gap energy values of the films decrease from 2.43 to 1.21 eV as the Sn concentration increases.
机译：通过超声喷雾热解（USP）方法，使用具有不同锡浓度的水溶液，在573 K衬底温度下将Cd_（1-x）Sn_xS半导体膜生产到玻璃衬底上。膜的厚度已经被计算为在14μm的范围内。该膜已被表征以评估其结构，形态，组成和光能带隙。 X射线衍射（XRD）研究表明，薄膜是具有六方，四方和正交结构的多晶。使用扫描电子显微镜（SEM）和能量色散光谱（EDS）研究了薄膜的形貌和组成特性。根据能量色散分析，薄膜中的锡浓度已从0％更改为84％。薄膜的光学带隙能量和光学跃迁的类型已经由透光光谱确定。随着Sn浓度的增加，薄膜的光带隙能量值从2.43降低至1.21 eV。

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