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Boron doping effects on the electronic structure of normal and superconductor carbon nanotubes

机译:硼掺杂对普通和超导体碳纳米管电子结构的影响

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摘要

Effects of boron doping on the electronic structures of normal and superconductor single walled carbon nanotubes (SWCNTs) are investigated. For the normal case we found that by increasing boron concentration the semiconducting energy gap, E-g, decreases. For the superconductor case the critical temperature is decreased by increasing the boron doping concentration.
机译:研究了硼掺杂对普通和超导体单壁碳纳米管(SWCNT)电子结构的影响。对于正常情况,我们发现通过增加硼浓度,半导体能隙E-g减小。对于超导体,通过增加硼掺杂浓度来降低临界温度。

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