Electron transport mechanism of thermally oxidized ZnO gas sensors

Al-Hardan N.H.; Abdullah M.J.; Abdul Aziz A.

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Electron transport mechanism of thermally oxidized ZnO gas sensors

机译：热氧化ZnO气体传感器的电子传输机理

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ZnO gas sensor was fabricated by thermal oxidation of metallic Zn at different time periods. The sensors were characterized by IV measurement with DC voltage, ranging from -2 to 2 volts, in both normal air and H_2 gas with concentration from 40 to 160 ppm. The transport mechanism of the carriers was found to be due to thermionic process through both the grain boundaries and the metalsemiconductor junctions. Resistance of the ZnO sensing film is independent of applied voltage in the range 0.5 V

机译：ZnO气体传感器是通过在不同时间段对金属Zn进行热氧化而制成的。传感器的特点是在普通空气和浓度为40至160 ppm的H_2气体中，通过DC电压（-2至2伏）对IV进行测量。发现载流子的传输机制是由于通过晶界和金属半导体结的热离子过程。 ZnO感应膜的电阻与施加的电压无关，范围为0.5 V

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《Physica, B. Condensed Matter》 |2010年第21期|共4页
作者
Al-Hardan N.H.; Abdullah M.J.; Abdul Aziz A.;
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正文语种 eng
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关键词
Electrical conductivity; Gas sensors; Oxidation process; ZnO;

机译：电导率;气体传感器;氧化工艺;ZnO;

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1. Electron transport mechanism of thermally oxidized ZnO gas sensors [J] . Al-Hardan N.H., Abdullah M.J., Abdul Aziz A. Physica, B. Condensed Matter . 2010,第21期

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Electron transport mechanism of thermally oxidized ZnO gas sensors

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