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首页> 外文期刊>Physica, B. Condensed Matter >Dielectric relaxation and ac conductivity of double perovskite oxide Ho_2ZnZrO_6
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Dielectric relaxation and ac conductivity of double perovskite oxide Ho_2ZnZrO_6

机译：钙钛矿双氧化物Ho_2ZnZrO_6的介电弛豫和交流电导率

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Double perovskite oxide holmium zinc zirconate Ho_2ZnZrO _6 (HZZ) is synthesized by solid state reaction technique under a calcination temperature of 1100°C. The crystal structure has been determined by powder X-ray diffraction, which shows monoclinic phase at room temperature. The variation of dielectric constant (ε′) and loss tangent (tan δ) with frequency is carried out assuming a distribution of relaxation times. The frequency corresponding to loss tangent peak is found to obey an Arrhenius law with activation energy of 89.7 meV. The frequency-dependant electrical data are analyzed in the framework of conductivity and electric modulus formalisms. Both these formalisms show qualitative similarities in relaxation times. The scaling behaviour of imaginary electric modulus shows the temperature-independent nature of the distribution of relaxation times. Nyquist plots are drawn to identify an equivalent circuit and to know the bulk and interface contributions.
机译：采用固相反应技术，在1100℃的煅烧温度下合成了钙钛矿型氧化锆锆酸锌HoHo_2ZnZrO_6（HZZ）。已经通过粉末X射线衍射确定了晶体结构，该粉末X射线衍射在室温下显示出单斜晶相。介电常数（ε'）和损耗角正切（tanδ）随频率的变化是在假设弛豫时间分布的情况下进行的。发现对应于损耗角正切峰的频率服从阿累尼乌斯定律，其激活能为89.7 meV。在电导率和电模量形式主义的框架内分析了频率相关的电数据。这两种形式主义在放松时间上都表现出质的相似性。虚数模量的缩放行为表明弛豫时间的分布与温度无关。绘制了奈奎斯特图以识别等效电路并了解体积和界面贡献。

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