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首页> 外文期刊>Physica, B. Condensed Matter >Eu~2-activated Ba_2Mg(BO_3)_2 yellow-emitting phosphors for near ultraviolet-based light-emitting diodes
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Eu~2-activated Ba_2Mg(BO_3)_2 yellow-emitting phosphors for near ultraviolet-based light-emitting diodes

机译：用于近紫外基发光二极管的Eu〜2活化Ba_2Mg（BO_3）_2发黄荧光粉

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摘要

A series of Eu~2-activated Ba_2Mg(BO_3) _2 yellow phosphors were prepared by a high temperature solid-state reaction. The phosphor emits intense yellow light under near ultraviolet excitation. Large Stokes shift can be attributed to the asymmetric nature of the Eu site and the lack of rigidity in the host. The concentration self-quenching mechanism of Ba_2Mg(BO_3)_2:Eu~2 is dd interaction and the critical transfer distance is calculated to be about 12.29 ?. Prototype light-emitting diodes were fabricated by coating the Ba 2Mg(BO3)2:0.07Eu~2 phosphor onto ～370 nm-emitting InGaN chips. The LEDs exhibit intense yellow-emitting under a forward bias of 20 mA. The results indicate that Eu~2-activated Ba_2Mg(BO_3)_2 is a candidate as a yellow component for fabrication of near-UV white light-emitting diodes.
机译：通过高温固相反应制备了一系列Eu〜2活化的Ba_2Mg（BO_3）_2黄色荧光粉。磷光体在近紫外光激发下发出强烈的黄光。较大的斯托克斯频移可归因于Eu站点的不对称性质以及主体缺乏刚性。 Ba_2Mg（BO_3）_2：Eu〜2的浓度自猝灭机理为dd相互作用，计算出的临界转移距离约为12.29Ω。通过将Ba 2Mg（BO3）2：0.07Eu〜2荧光粉涂覆到〜370 nm的InGaN芯片上来制造原型发光二极管。 LED在20 mA的正向偏压下呈现强烈的黄光发射。结果表明，Eu〜2活化的Ba_2Mg（BO_3）_2是制备近紫外白光发光二极管的黄色组分的候选材料。

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