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首页> 外文期刊>Physica, B. Condensed Matter >Deep level transient spectroscopy (DLTS) study of defects introduced in antimony doped Ge by 2 MeV proton irradiation
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Deep level transient spectroscopy (DLTS) study of defects introduced in antimony doped Ge by 2 MeV proton irradiation

机译：2 MeV质子辐照在掺锑Ge中引入的缺陷的深层瞬态光谱（DLTS）研究

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摘要

Deep level transient spectroscopy (DLTS) and Laplace-DLTS have been used to investigate the defects created in Sb doped Ge after irradiation with 2 MeV protons having a fluence of 1×10~(13) protons/cm~2. The results show that proton irradiation resulted in primary hole traps at E _V 0.15 and E_V 0.30 eV and electron traps at E_C -0.38, E_C -0.32, E_C -0.31, E_C -0.22, E _C -0.20, E_C -0.17, E_C -0.15 and E_C -0.04 eV. Defects observed in this study are compared with those introduced in similar samples after MeV electron irradiation reported earlier. E_C -0.31, E_C -0.17 and E_C -0.04, and E_V 0.15 eV were not observed previously in similar samples after high energy irradiation. Results from this study suggest that although similar defects are introduced by electron and proton irradiation, traps introduced by the latter are dose dependent.
机译：利用深能级瞬态光谱法（DLTS）和Laplace-DLTS研究了掺有1×10〜（13）质子/ cm〜2的2 MeV质子辐照在掺Sb的Ge中产生的缺陷。结果表明，质子辐照导致E_V 0.15和E_V 0.30 eV处的主要空穴陷阱和E_C -0.38，E_C -0.32，E_C -0.31，E_C -0.22，E _C -0.20，E_C -0.17，E_C-的电子陷阱0.15和E_C -0.04 eV。将本研究中观察到的缺陷与先前报道的MeV电子辐照后在类似样品中引入的缺陷进行比较。高能量照射后，类似样品中先前未观察到E_C -0.31，E_C -0.17和E_C -0.04和E_V 0.15 eV。这项研究的结果表明，尽管电子和质子辐照会引入类似的缺陷，但电子和质子辐照所引入的陷阱却与剂量有关。

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