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首页> 外文期刊>Physica, B. Condensed Matter >Electronic structure and transport on the surface of topological insulator attached to an electromagnetic superlattice
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Electronic structure and transport on the surface of topological insulator attached to an electromagnetic superlattice

机译：附着在电磁超晶格上的拓扑绝缘体表面的电子结构和传输

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We study the electronic structure and transport for Dirac electron on the surface of a three-dimensional (3D) topological insulator attached to an electromagnetic superlattice. It is found that, by means of the transfer-matrix method, the number of electronic tunneling channels for magnetic barriers in antiparallel alignment is larger than that in parallel alignment, which stems to the energy band structures. Interestingly, a remarkable semiconducting transport behavior appears in this system with a strong magnetic barrier due to low energy band nearly paralleling to the Fermi level. Consequently, there is only small incident angle transport in the higher energy region when the system is modulated mainly by the higher electric barriers. We further find that the spatial distribution of the spin polarization oscillates periodically in the incoming region, but it is almost in-plane with a fixed direction in the transmitting region. The results may provide a further understanding of the nature of 3D TI surface states, and may be useful in the design of topological insulator-based electronic devices such as collimating electron beam.
机译：我们研究了附着在电磁超晶格上的三维（3D）拓扑绝缘子的表面上Dirac电子的电子结构和传输。发现通过转移矩阵法，反平行排列的磁性势垒的电子隧穿通道的数量大于平行排列的磁性势垒的电子隧穿通道的数量，这取决于能带结构。有趣的是，由于几乎平行于费米能级的低能带，在该系统中出现了具有强磁性势垒的显着半导体传输行为。因此，当系统主要由较高的电势垒进行调制时，在较高的能量区域中只有很小的入射角传输。我们进一步发现，自旋极化的空间分布在入射区域中周期性地振荡，但在透射区域中它几乎在平面内且方向固定。结果可以提供对3D TI表面状态性质的进一步了解，并且在基于拓扑绝缘体的电子设备（如准直电子束）的设计中可能有用。

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