The origin of a peak in the reststrahlen region of SiC

Engelbrecht J.A.A.; Van Rooyen I.J.; Henry A.; Janzén E.; Olivier E.J.

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The origin of a peak in the reststrahlen region of SiC

机译：SiC剩余区的峰的起源

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摘要

A peak in the reststrahlen region of SiC is analyzed in order to establish the origin of this peak. The peak can be associated with a thin damaged layer on the SiC wafers, and a relation is found between surface roughness and the height of this peak, by modeling the damaged layer as an additional layer when simulating the reflectivity from the wafers.

机译：为了确定该峰的起源，分析了SiC的reststrahlen区域中的峰。该峰可以与SiC晶片上的薄薄的受损层相关联，并且通过在模拟来自晶片的反射率时将受损层建模为附加层，可以在表面粗糙度和该峰的高度之间找到关系。

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《Physica, B. Condensed Matter》 |2012年第10期|共4页
作者
Engelbrecht J.A.A.; Van Rooyen I.J.; Henry A.; Janzén E.; Olivier E.J.;
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正文语种 eng
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关键词
Anomalous peak; Infrared reflectance; Reststrahlen region; SiC;

机译：异常峰;红外反射率;Reststrahlen区;SiC;

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The origin of a peak in the reststrahlen region of SiC

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