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首页> 外文期刊>Physica, B. Condensed Matter >Electronic structure analysis of Mn- and Fe-codoped In _2O _3 by photoemission yield measurements
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Electronic structure analysis of Mn- and Fe-codoped In _2O _3 by photoemission yield measurements

机译:Mn和Fe共掺杂In _2O _3的电子结构分析

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摘要

The valence band electronic structures of Mn- and/or Fe-doped In _2O _3, i.e., In _2O _3:Mn, In _2O _3:Fe, and In _2O _3:(Mn, Fe), are investigated by photoemission yield measurements. Significant changes are observed in the threshold energy of photoemission, depending on the doped magnetic ions, which indicates that an additional occupied band appears above the top of the valence band of In _2O _3 owing to doping with Mn and/or Fe ions. It is confirmed that the order of the threshold energies of photoemission, E PET, is E PET(In _2O _3:Mn)
机译:通过光发射产率测量研究了Mn和/或Fe掺杂的In _2O _3的价带电子结构,即In _2O _3:Mn,In _2O _3:Fe和In _2O _3:(Mn,Fe)。根据掺杂的磁性离子,观察到光发射的阈值能量发生了显着变化,这表明由于掺杂了Mn和/或Fe离子,In _2O _3价带的上方出现了一个额外的占据带。确认了光发射的阈值能量E PET的顺序为E PET(In _2O _3:Mn)

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