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首页> 外文期刊>Physica, B. Condensed Matter >Improved electrical parameters of vacuum annealed Ni/4H-SiC (0001) Schottky barrier diode
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Improved electrical parameters of vacuum annealed Ni/4H-SiC (0001) Schottky barrier diode

机译：真空退火Ni / 4H-SiC（0001）肖特基势垒二极管的改进电参数

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摘要

The reported work has been focused on the improvement of electrical parameters of Schottky diode using vacuum annealing at mild temperature in Ar gas ambient. Nickel Schottky barrier diodes were fabricated on 50 μm epitaxial layer of n-type 4H-SiC (0 0 0 1) substrate. The values of leakage current, Schottky barrier height (φ_B), ideality factor (η) and density of interface states (N_(SS)) were obtained from experimentally measured currentvoltage (IV) and capacitancevoltage (CV) characteristics before and after vacuum annealing treatment. The data revealed that φ_B, η and reverse leakage current for the as-processed diodes are 1.25 eV, 1.6 and 1.2 nA (at -100 V), respectively, while for vacuum annealed diodes these parameters are 1.36 eV, 1.3 and 900 pA (at same reverse voltage). Improved characteristics have been resulted under the influence of vacuum annealing because of lesser number of minority carrier generation due to incessant reduction of number of available discrete energy levels in the bandgap of 4H-SiC substrate and lesser number of interface states density at Ni/4H-SiC (0001) interface.
机译：报道的工作集中在在氩气环境中在温和的温度下使用真空退火来改善肖特基二极管的电参数。在n型4H-SiC（0 0 0 1）衬底的50μm外延层上制造了镍肖特基势垒二极管。真空退火处理前后的实验电压电流（IV）和电容电压（CV）特性可得出漏电流，肖特基势垒高度（φ_B），理想因子（η）和界面态密度（N_（SS））的值。数据显示，加工后的二极管的φ_B，η和反向漏电流分别为1.25 eV，1.6和1.2 nA（在-100 V时），而对于真空退火二极管，这些参数分别为1.36 eV，1.3和900 pA（在相同的反向电压）。在真空退火的影响下，由于不断减少4H-SiC衬底的带隙中可用离散能级的数量，减少了少数载流子的产生，并且在Ni / 4H-处，界面态密度的数量减少，从而改善了特性SiC（0001）界面。

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