Electronic band structure of pseudo-binary AlB_2-like hexagonal silicides SrNi_xSi_2-x as novellow-T_C superconductors

Shein I.R.; Ivanovskii A.L.

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Electronic band structure of pseudo-binary AlB_2-like hexagonal silicides SrNi_xSi_2-x as novellow-T_C superconductors

机译：拟二元AlB_2样六角形硅化物SrNi_xSi_2-x作为新型低T_C超导体的电子能带结构

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The very recently discovered pseudo-binary hexagonal silicide SrNi_xSi_(2-x), which exhibits low-T_C superconductivity, was examined theoretically to understand the effect of the unusual doping type (partial replacement of Si by Ni) on the electronic band structure of this material. Besides, the possible factors of the stabilization of the hexagonal AlB_2-type structure of SrSi_2 upon substitution of Ni for Si, and the solubility limit of Ni in SrNi_xSi_(2-x) are discussed in terms of competing Si-Si, Si-Ni, and Ni-Ni bonds.

机译：理论上检查了最近发现的伪二元六方硅化物SrNi_xSi_（2-x），它具有低T_C超导性，以了解异常掺杂类型（用Ni部分取代Si）对其电子带结构的影响材料。此外，根据竞争性Si-Si，Si-Ni，讨论了Ni替代Si后，SrSi_2的六方AlB_2型结构稳定的可能因素，以及Ni在SrNi_xSi_（2-x）中的溶解度极限。和Ni-Ni键。

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《Physica, B. Condensed Matter》 |2012年第23期|共3页
作者
Shein I.R.; Ivanovskii A.L.;
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正文语种 eng
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Ab initio calculations; Electronic band structure; Ni-doped SrSi_2;

机译：从头算;电子能带结构;掺Ni SrSi_2;

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1. Electronic band structure of pseudo-binary AlB_2-like hexagonal silicides SrNi_xSi_2-x as novellow-T_C superconductors [J] . Shein I.R., Ivanovskii A.L. Physica, B. Condensed Matter . 2012,第23期

机译：拟二元AlB_2样六角形硅化物SrNi_xSi_2-x作为新型低T_C超导体的电子能带结构
2. Band structure of new superconducting AlB2-like ternary silicides M(Al0.5Si0.5)(2) and M(Ga0.5Si0.5)(2) (where M = Ca, Sr and Ba) [J] . Shein IR., Medvedeva NI., Ivanovskii AL. Journal of Physics. Condensed Matter . 2003,第33期

机译：新型超导AlB2类三元硅化物M（Al0.5Si0.5）（2）和M（Ga0.5Si0.5）（2）的能带结构（其中M = Ca，Sr和Ba）
3. Band structure of new superconducting AlB2-like ternary silicides M(Al0.5Si0.5)(2) and M(Ga0.5Si0.5)(2) (where M = Ca, Sr and Ba) [J] . Shein IR., Medvedeva NI., Ivanovskii AL. Journal of Physics. Condensed Matter . 2003,第33期

机译：新型超导AlB2类三元硅化物M（Al0.5Si0.5）（2）和M（Ga0.5Si0.5）（2）的能带结构（其中M = Ca，Sr和Ba）
4. The band structure and electronic density of states of thermoelectric Co-doped magnesium silicide [C] . Chunlin Fu, Huan Liao, Wei Cai, IUMRS International Conference in Asia;IUMRS-ICA 2010 . 2011

机译：热电共掺杂硅化镁的能带结构和电子密度
5. ARPES studies of the electronic band structure of high-temperature superconducting materials. [D] . Gofron, Kazimierz Jan. 1993

机译：ARPES研究高温超导材料的电子能带结构。
6. Specific heat Electrical resistivity and Electronic band structure properties of noncentrosymmetric Th7Fe3 superconductor [O] . V. H. Tran, M. Sahakyan -1

机译：非中心对称Th7Fe3超导体的比热电阻率和电子能带结构特性
7. Superconductivity in Pseudo-Binary Silicide SrNixSi2−x with AlB2-Type Structure [O] . Sunseng Pyon, Kazutaka Kudo, Minoru Nohara 2016

机译：具有alB2型结构的伪二元硅化物srNixsi2-x的超导电性

Electronic band structure of pseudo-binary AlB_2-like hexagonal silicides SrNi_xSi_2-x as novellow-T_C superconductors

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