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首页> 外文期刊>Physica, B. Condensed Matter >Low-temperature absorption edge and photoluminescence in layered structured Tl _2Ga _2S _3Se single crystals
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Low-temperature absorption edge and photoluminescence in layered structured Tl _2Ga _2S _3Se single crystals

机译：层状结构的Tl _2Ga _2S _3Se单晶的低温吸收边和光致发光

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摘要

The absorption edge of undoped Tl _2Ga _2S _3Se crystals have been studied through transmission and reflection measurements in the wavelength range 440-1100 nm and in the temperature range 10-300 K. The absorption edge was observed to shift toward lower energy values with increasing temperature. As a result, the rate of the indirect band gap variation with temperature γ=-2.6×10 ~(-4) eV/K and the absolute zero value of the band gap energy E _(gi)(0)=2.42 eV were obtained. The emission band spectra of Tl _2Ga _2S _3Se crystals have been studied in the temperature range 10-60 K and in the wavelength region 505-605 nm. A broad photoluminescence (PL) band centered at 550 nm (2.25 eV) was observed at T=10 K. Variation of emission band has been studied as a function of excitation laser intensity in the 0.3-41.5 mW cm ~(-2) range. Radiative transitions from the shallow donor level E _d=0.01 eV to the moderately deep acceptor level E _a=0.16 eV were suggested to be responsible for the observed PL band.
机译：通过在440-1100 nm波长范围和10-300 K温度范围内的透射和反射测量，研究了未掺杂的Tl _2Ga _2S _3Se晶体的吸收边。随着温度的升高，观察到吸收边向较低的能量值移动。结果，温度γ= -2.6×10〜（-4）eV / K的间接带隙变化率和带隙能量E _（gi）（0）= 2.42 eV的绝对值为零。获得。 Tl _2Ga _2S _3Se晶体的发射带光谱已在10-60 K的温度范围和505-605 nm的波长范围内进行了研究。在T = 10 K处观察到以550 nm（2.25 eV）为中心的宽光致发光（PL）谱带。研究了在0.3-41.5 mW cm〜（-2）范围内发射谱带随激发激光强度的变化情况。 。建议从浅的供体能级E _d = 0.01 eV到中等深度的受体能级E _a = 0.16 eV的辐射跃迁是观察到的PL带的原因。

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