...
  • 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Physica, B. Condensed Matter >Conduction mechanism and the dielectric relaxation process of a-Se _(75)Te _(25-x)Ga _x (x=0, 5, 10 and 15 at wt%) chalcogenide glasses
【24h】

Conduction mechanism and the dielectric relaxation process of a-Se _(75)Te _(25-x)Ga _x (x=0, 5, 10 and 15 at wt%) chalcogenide glasses

机译：a-Se _（75）Te _（25-x）Ga _x（x = 0、5、10和15 at wt％）硫族化物玻璃的导电机理和介电弛豫过程

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

Se _(75)Te _(25-x)Ga _x (x=0, 5, 10 and 15 at wt%) chalcogenide compositions were prepared by the well known melt quenching technique. Thin films with different thicknesses in the range (185-630 nm) of the obtained compositions were deposited by thermal evaporation technique. X-ray diffraction patterns indicate that the amorphous nature of the obtained films. The ac conductivity and the dielectric properties of the studied films have been investigated in the frequency range (10 ~2-10 ~5 Hz) and in the temperature range (293-333 K). The ac conductivity was found to obey the power low ω s where s≤1 independent of film thickness. The temperature dependence of both ac conductivity and the exponent s can be well interpreted by the correlated barrier hopping (CBH) model. The experimental results of the dielectric constant ε _1 and dielectric loss ε _2 are frequency and temperature dependent. The maximum barrier height W _m calculated from the results of the dielectric loss according to the Guintini equation, and agrees with that proposed by the theory of hopping of charge carriers over a potential barrier as suggested by Elliott for chalcogenide glasses. The density of localized state was estimated for the studied film compositions. The variation of the studied properties with Ga content was also investigated. The correlation between the ac conduction and the dielectric properties were verified.
机译：通过众所周知的熔融淬火技术制备了Se_（75）Te_（25-x）Ga_x（以重量％计，x ＝ 0、5、10和15）硫属化物组合物。通过热蒸发技术沉积在获得的组合物的范围（185-630nm）内具有不同厚度的薄膜。 X射线衍射图表明所获得的膜为非晶态。已在频率范围（10〜2-10〜5 Hz）和温度范围（293-333 K）中研究了所研究薄膜的交流电导率和介电性能。发现交流电导率服从功率低ωs，其中s≤1与膜厚无关。交流电导率和指数s的温度相关性可以通过相关势垒跳跃（CBH）模型很好地解释。介电常数ε_1和介电损耗ε_2的实验结果与频率和温度有关。最大的势垒高度W _m是根据Guintini方程根据介电损耗的结果计算得出的，并且与Elliott对于硫族化物玻璃所建议的，载流子在势垒之上跳跃的理论相一致。对于所研究的膜组合物，估计了局部状态的密度。还研究了所研究性质随Ga含量的变化。验证了交流传导和介电性能之间的相关性。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号