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首页> 外文期刊>Physica, B. Condensed Matter >Low temperature electron transport in phosphorus-doped ZnO films grown on Si substrates
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Low temperature electron transport in phosphorus-doped ZnO films grown on Si substrates

机译：Si衬底上生长的掺磷ZnO薄膜中的低温电子传输

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摘要

Low temperature magneto-transport properties and electron dephasing mechanisms of phosphorus-doped ZnO thin films grown on (1 1 1) Si substrates with Lu _2O _3 buffer layers using pulsed laser deposition were investigated in detail by quantum interference and weak localization theories under magnetic fields up to 10 T. The dephasing length follows the temperature dependence with an index p≈1.6 at higher temperatures indicating electron-electron interaction, yet becomes saturated at lower temperatures. Consistent with photoluminescence measurements and the multi-band simulation of the electron concentration, such behavior was associated with the dislocation densities obtained from x-ray diffraction and mobility fittings, where charged edge dislocations acting as inelastic Coulomb scattering centers were affirmed responsible for electron dephasing. Owing to the temperature independence of the dislocation density, the phosphorus-doped ZnO film maintained a Hall mobility of 4.5 cm ~2 V ~(-1) s ~(-1) at 4 K.
机译：通过量子干涉和弱磁场理论，详细研究了脉冲脉冲激光沉积在带有Lu _2O _3缓冲层的（1 1 1）Si衬底上生长的掺磷ZnO薄膜的低温磁传输特性和电子移相机理。移相长度遵循温度依赖性，在较高温度下的指数p≈1.6，表明电子与电子相互作用，而在较低温度下达到饱和。与光致发光测量和电子浓度的多频带模拟一致，这种行为与从x射线衍射和迁移率拟合获得的位错密度有关，其中确定充当非弹性库仑散射中心的带电边缘位错负责电子的移相。由于位错密度的温度独立性，掺磷的ZnO薄膜在4 K时保持4.5 cm〜2 V〜（-1）s〜（-1）的霍尔迁移率。

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