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首页> 外文期刊>Physica, C. Superconductivity and its applications >IBAD-MgO buffer layers for coated conductors in the large-scale system
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IBAD-MgO buffer layers for coated conductors in the large-scale system

机译：大型系统中用于涂层导体的IBAD-MgO缓冲层

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摘要

For practical applications of high-temperature superconductor tape, the high production rate of tapes is needed to reduce its cost. Recently, the long-length coated conductor with high performance has been fabricated by an ion beam assisted deposition/pulsed laser deposition (IBAD/PLD) method in Fujikura. In IBAD process, we adopted IBAD-Gd2Zr2O7 (GZO) film. The process speed of IBAD-GZO film was increased up to 5 m/h using a polished metal substrate tape. To fabricate biaxially-textured buffer layers at a higher rate, we have started to develop another structures such as (a) IBAD-GZO/IBAD-MgO (3-fold symmetry) and (b) IBAD-MgO (4-fold symmetry). In the case (a), we fabricated GdBCO/CeO2/IBAD-GZO/IBAD-MgO tape and the critical current was I-c = 550 A/cm (2.46 MA/cm(2)) and throughput of IBAD processes were 20 m/h. In the case (b), IBAD-MgO short samples with Delta phi of, 9 degrees-11 degrees were obtained at 500 m/h. The 500 m/h (10 mm width) is extremely high rate in [BAD process in the world. As long-length IBAD layer 10 m, 50 m and 100 in IBAD-MgO films were fabricated at the speed of 100 m/h. After CeO2 deposition, in-plane textures of these samples were Delta phi of 3.7 degrees-3.7 degrees, 4.1 degrees-4.9 degrees and 4.2 degrees-4.8 degrees. Using some of these buffer layers, we have obtained GdBCO film with I-c = 400 A/cm (2 MA/cm(2), 10 m) and I-c = 550 A/cm (2.7 MA/cm(2), short sample).
机译：对于高温超导带的实际应用，需要高的带生产率以降低其成本。最近，在藤仓通过离子束辅助沉积/脉冲激光沉积（IBAD / PLD）方法制造了高性能的长涂覆导体。在IBAD工艺中，我们采用了IBAD-Gd2Zr2O7（GZO）膜。使用抛光的金属基材胶带，IBAD-GZO膜的处理速度提高到5 m / h。为了以更高的速率制造双轴纹理化的缓​​冲层，我们已开始开发另一种结构，例如（a）IBAD-GZO / IBAD-MgO（3倍对称性）和（b）IBAD-MgO（4倍对称性） 。在情况（a）中，我们制造了GdBCO / CeO2 / IBAD-GZO / IBAD-MgO胶带，临界电流为Ic = 550 A / cm（2.46 MA / cm（2）），IBAD工艺的吞吐量为20 m / H。在情况（b）中，以500 m / h获得Delta phi为9度至11度的IBAD-MgO短样品。 500 m / h（10毫米宽）是世界上[BAD工艺中]极高的速度。作为IBAD-MgO膜中的10m，50m和100m的长IBAD层，以100m / h的速度制造。在CeO2沉积之后，这些样品的平面纹理为3.7度至3.7度，4.1度至4.9度和4.2度至4.8度的Delta phi。使用其中一些缓冲层，我们获得了Id = 400 A / cm（2 MA / cm（2），10 m）和Ic = 550 A / cm（2.7 MA / cm（2），短样本）的GdBCO膜。

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