Auger effect as the origin of the fast-luminescent band of freshly anodized porous silicon

Mghaieth R.; Mihalcescu I.; Vial JC.; Maaref H.

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Auger effect as the origin of the fast-luminescent band of freshly anodized porous silicon

机译：俄歇效应是刚阳极氧化的多孔硅快速发光带的起源

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Time-resolved photoluminescence measurements are performed on oxidized and fresh porous silicon at room temperature. Comparing the evolution of the nanosecond time-delayed photoluminescence (PL) in both cases, a new feature of the PL spectra is identified: a fast red band, present both in fresh and aged samples. The nonlinear excitation intensity dependence of this component is described by a simple model, where the Auger effect inside isolated silicon quantum dots plays the dominant role. [S0163-1829(99)03932-6]. [References: 19]

机译：时间分辨的光致发光测量是在室温下对氧化的新鲜多孔硅进行的。比较两种情况下纳秒级延时光致发光（PL）的演变，可以确定PL光谱的新特征：在新鲜和老化样品中均存在快速红带。用一个简单的模型描述了该成分的非线性激发强度依赖性，其中孤立硅量子点内部的俄歇效应起主要作用。 [S0163-1829（99）03932-6]。 [参考：19]

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《Physical Review, B. Condensed Matter》 |1999年第7期|共4页
作者
Mghaieth R.; Mihalcescu I.; Vial JC.; Maaref H.;
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正文语种 eng
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关键词
Blue luminescence; Saturation; Emission; Dynamics; Si;

机译：蓝色发光;饱和度;发射;动力学;硅;

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1. Auger effect as the origin of the fast-luminescent band of freshly anodized porous silicon [J] . Mghaieth R., Mihalcescu I., Vial JC., Physical Review, B. Condensed Matter . 1999,第7期

机译：俄歇效应是刚阳极氧化的多孔硅快速发光带的起源
2. EXPERIMENTAL DETERMINATION OF THE ELECTRICAL BAND-GAP ENERGY OF POROUS SILICON AND THE BAND OFFSETS AT THE POROUS SILICON CRYSTALLINE SILICON HETEROJUNCTION [J] . Romstad FP., Veje E. Physical Review, B. Condensed Matter . 1997,第8期

机译：实验测定多孔硅的能带隙能和多孔硅晶体硅异质结处的带隙
3. Interlayer interaction and pi-band electron occupation on top layers of freshly cleaved bulk HOPG investigated with N(E) C KVV Auger electron spectroscopy [J] . Dementjev A. P., Ivanov K. E., Tsyvkunova E. A. Applied Surface Science . 2015,第DECa1PTaB期

机译：N（E）C KVV俄歇电子能谱研究新鲜裂解的散装HOPG顶层的层间相互作用和pi带电子占据
4. Auger effect seen in the porous silicon fast luminescent band [C] . R. Mghaieth, I. Mihalcescu, H. Maaref, Symposium on microcrystalline and nanocrystalline semiconductors . 1999

机译：在多孔硅快速发光带中看到的螺旋钻效果
5. Electrochemical preparation and physicochemical characterization of porous silicon and anodic films of porous silicon dioxide. [D] . Rosario Canales, Mariem R. 2006

机译：多孔硅的电化学制备和物理化学表征以及多孔二氧化硅的阳极膜。
6. Electrochemically anodized porous silicon: Towards simple and affordable anode material for Li-ion batteries [O] . T. Ikonen, T. Nissinen, E. Pohjalainen, -1

机译：电化学阳极氧化多孔硅：采用简单且价格合理的锂离子电池负极材料
7. Special Issue/Anodizing-Manufacturing, Function and Application. Anodically Produced Porous Silicon. [O] . Toshimichi ITO, Akio HIRAKI 1995

机译：特殊问题/阳极化制造，功能和应用。阳极产生多孔硅。

Auger effect as the origin of the fast-luminescent band of freshly anodized porous silicon

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