Atomic depth distribution and effects of surfactants in growth of Ag and Au on Si(111)-root 3x root 3-Ga(1ML),-4x1-In and-2 root 3x2 root 3-Sn surfaces at room temperature - art. no. 085316

Yamanaka T.; Ino S.

首页> 外文期刊>Physical Review, B. Condensed Matter >Atomic depth distribution and effects of surfactants in growth of Ag and Au on Si(111)-root 3x root 3-Ga(1ML),-4x1-In and-2 root 3x2 root 3-Sn surfaces at room temperature - art. no. 085316

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Atomic depth distribution and effects of surfactants in growth of Ag and Au on Si(111)-root 3x root 3-Ga(1ML),-4x1-In and-2 root 3x2 root 3-Sn surfaces at room temperature - art. no. 085316

机译：室温下Si（111）-根3x根3-Ga（1ML），-4x1-In和-2根3x2根3-Sn表面上Ag和Au的原子深度分布以及表面活性剂的生长-艺术。没有。 085316

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The atomic depth distribution and growth modes in six growth processes, the growth of Ag and Au on root3xroot3-Ga(1 ML), 4x1-In, and 2root3x2root3-Sn surfaces, were studied at room temperature by using reflection high-energy electron diffraction and characteristic x-ray measurements as functions of glancing angle theta(g) of the incident electron beam. In all growth processes, intermixing between a preadsorbed metal [metal A, (Ga, In, Sn)] and a grown metal [metal B (Ag, Au)] was observed after deposition of 1 ML of metal B. During further deposition of metal B, three growth modes were observed: (i) further intermixing between metal A and metal B (Ag/In and Ag/Sn), (ii) segregation of metal A to the uppermost layers (Ag/Ga, Au/Ga), and (iii) segregation of a part of metal A to the uppermost layers and intermixing of the other part of metal A with metal B (Au/In, and Au/Sn). In all processes, metal A acted as a surfactant, i.e., the surface roughness was suppressed by preadsorption of metal A, resulting in a layer-by-layer growth mode of metal B. [References: 45]

机译：通过反射高能电子衍射在室温下研究了在根3xroot3-Ga（1 ML），4x1-In和2root3x2root3-Sn表面上Ag和Au的六个生长过程的原子深度分布和生长模式。和特征X射线测量值随入射电子束的掠射角theta（g）的变化而变化。在所有生长过程中，沉积1 ML的金属B后，都观察到预吸附的金属[金属A，（Ga，In，Sn）]和生长的金属[金属B（Ag，Au）]之间的混合。金属B观察到三种生长模式：（i）金属A和金属B之间进一步混合（Ag / In和Ag / Sn），（ii）金属A偏析到最上层（Ag / Ga，Au / Ga）（iii）将一部分金属A隔离到最上层，并将另一部分金属A与金属B（Au / In和Au / Sn）混合。在所有过程中，金属A都充当表面活性剂，即通过金属A的预吸附抑制了表面粗糙度，从而形成了金属B的逐层生长方式。[参考文献：45]

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《Physical Review, B. Condensed Matter》 |2002年第8期|共1页
作者
Yamanaka T.; Ino S.;
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X-ray spectroscopy; Scanning-tunneling-microscopy; Epitaxial-growth; Si(111) surfaces; Initial-stages; Standing-wave; Interface; Modes; System; Energy;

机译：X射线光谱;扫描隧道显微镜;外延生长;Si（111）表面;初始阶段;驻波;界面;模式;系统;能量;

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1. Atomic depth distribution and effects of surfactants in growth of Ag and Au on Si(111)-root 3x root 3-Ga(1ML),-4x1-In and-2 root 3x2 root 3-Sn surfaces at room temperature - art. no. 085316 [J] . Yamanaka T., Ino S. Physical Review, B. Condensed Matter . 2002,第8期

机译：室温下Si（111）-根3x根3-Ga（1ML），-4x1-In和-2根3x2根3-Sn表面上Ag和Au的原子深度分布以及表面活性剂的生长-艺术。没有。 085316
2. STM observation of Si(111)-alpha-root 3x root 3-Sn at low temperature - art. no. 201308 [J] . Morikawa H., Matsuda I., Hasegawa S. Physical Review, B. Condensed Matter . 2002,第20期

机译：Si（111）-α-根3x根3-Sn的STM低温观察-艺术。没有。 201308
3. STM observation of Si(111)-alpha-root 3x root 3-Sn at low temperature - art. no. 201308 [J] . Morikawa H., Matsuda I., Hasegawa S. Physical Review, B. Condensed Matter . 2002,第20期

机译：Si（111）-α-根3x根3-Sn的STM低温观察-艺术。没有。 201308
4. Hydrogen chemisorption on the Si(111) the square root of 3× the square root of 3R30°-Al, -Ga, -B surfaces: An ab initio HF/DFT molecular orbital modelling using atomic clusters [C] . Sanwu Wang, M. W. Radny, P. V. Smith Symposium D on Computational Modeling of Issues in Materials Science . 1997

机译：Si（111）上的氢化学吸附3×330° - κB，-GA，-B表面的平方根：AB初始HF / DFT分子轨道模拟使用原子簇
5. EFFECTS OF TEMPERATURE, PRECIPITATION, SOLAR RADIATION, AND ROOTING DEPTH ON SOYBEAN YIELD, SEED PROTEIN, SEED OIL, AND LEAF COMPOSITION. [D] . VINANDE, ROGER ANTHONY. 1976

机译：温度，降水，太阳辐射和生根深度对大豆产量，种子蛋白质，种子油和叶组成的影响。
6. Effects of Growth Medium and Water Stress on Soybean Glycine max (L.) Merr. Growth Soil Water Extraction and Rooting Profiles by Depth in 1-m Rooting Columns [O] . Michael Gebretsadik Gebre, Hugh James Earl 2020

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7. Ultrafast Atomic Diffusion Inducing a Reversible (2 root 3x2 root 3)R30 degrees <-> (root 3x root 3)R30 degrees Transition on Sn/Si(111) : B [O] . Srour, Waked, Trabada, Daniel G., Martinez, J. I., 2015

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8. Atomic Structures of the Au-Induced Reconstructions of Si(111): 5 x 1, Square Root 3 x 3 Square Root 3 and 6 x 6 [R] . Huang, J. H., Williams, R. S. 1988

机译：au诱导重建si（111）的原子结构：5 x 1，平方根3 x 3平方根3和6 x 6

Atomic depth distribution and effects of surfactants in growth of Ag and Au on Si(111)-root 3x root 3-Ga(1ML),-4x1-In and-2 root 3x2 root 3-Sn surfaces at room temperature - art. no. 085316

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