首页> 外文期刊>The Journal of Chemical Physics >Ab initio molecular dynamics simulations of properties of a-Al_2O_3 /vacuum and a-ZrO_2 /vacuum vs a-Al_2O_3/Ge(100)(2 X 1)and a-ZrO_2/Ge(100)(2 X 1) interfaces
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Ab initio molecular dynamics simulations of properties of a-Al_2O_3 /vacuum and a-ZrO_2 /vacuum vs a-Al_2O_3/Ge(100)(2 X 1)and a-ZrO_2/Ge(100)(2 X 1) interfaces

机译:从头算分子动力学模拟a-Al_2O_3 / vacuum和a-ZrO_2 / vacuum与a-Al_2O_3 / Ge(100)(2 X 1)和a-ZrO_2 / Ge(100)(2 X 1)界面的性质

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摘要

The local atomic structural properties of a-Al_2O_3,a-ZrO_2vacuum/oxide surfaces, anda-Al_2O_3/Ge(100)(2X1), a-ZrO_2/2X1) oxide/semiconductor interfaces were investigatedby density-functional theory (DFT) molecular dynamics (MD) simulations. Realistic a-Al_2O_3anda-ZrO_2 bulk samples were generated using a hybrid classical-DFT MD approach. The interfaceswere formed by annealing at 700 and 1100 K with subsequent cooling and relaxation. The a-Al_2O_3and a-ZrO_2 vacuum/oxide interfaces have strong oxygen enrichment. The a-Al_2O_3/Ge interfacedemonstrates strong chemical selectivity with interface bonding exclusively through Al–O–Gebonds. The a-ZrO_2/Ge interface has roughly equal number of Zr–O–Ge and 0–Zr–Ge bonds. Thea-Al_2O_3/Ge junction creates a much more polar interface, greater deformation in Ge substrate andinterface intermixing than a-ZrO_2/ Ge consistent with experimental measurements. The differencesin semiconductor deformation are consistent with the differences in the relative bulk moduli andangular distribution functions of the two oxides.
机译:通过密度泛函理论(DFT)分子动力学研究了a-Al_2O_3,a-ZrO_2真空/氧化物表面和a-Al_2O_3 / Ge(100)(2X1),a-ZrO_2 / 2X1)氧化物/半导体界面的局部原子结构性质。 (MD)模拟。使用混合经典DFT MD方法生成了逼真的a-Al_2O_3anda-ZrO_2大量样品。界面是通过在700和1100 K下退火并随后冷却和松弛而形成的。 a-Al_2O_3和a-ZrO_2真空/氧化物界面具有很强的氧富集。 a-Al_2O_3 / Ge界面通过仅通过Al–O–Gebonds进行界面键合显示出强大的化学选择性。 a-ZrO_2 / Ge界面的Zr–O–Ge和0–Zr–Ge键数量大致相等。与实验测量结果相一致,a-Al_2O_3 / Ge结比a-ZrO_2 / Ge产生了更多的极性界面,Ge衬底中更大的变形以及界面混合。半导体变形的差异与两种氧化物的相对体积模量和角分布函数的差异一致。

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