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首页> 外文期刊>The Journal of Chemical Physics >Enhancement of SiO2/Si(001) interfacial oxidation induced by thermal strain during rapid thermal oxidation
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Enhancement of SiO2/Si(001) interfacial oxidation induced by thermal strain during rapid thermal oxidation

机译：快速热氧化过程中由热应变引起的SiO2 / Si（001）界面氧化的增强

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摘要

Rapid thermal oxidation, in which samples are intensely heated to a preset temperature, is used to grow silicon oxide on Si substrates while avoiding significant diffusion of impurities into the substrate. In previously proposed reaction models for rapid thermal oxidation, the oxidation rate is only determined by the temperature and O-2 pressure. Therefore, it is believed that the rate of oxidation at a preset temperature is independent of the initial substrate temperature. In this study, the interfacial oxidation reactions that follow Si(001) surface oxidation were observed using real-time Auger electron spectroscopy. Interfacial oxidation was enhanced when the substrate temperature was increased from temperature T-1 to temperature T-2 at the end of Si(001) surface oxidation. As a result, strong T-1 and T-2 dependences of the interfacial oxidation rate were observed. The interfacial oxidation rate at T-1 = room temperature was more than 10 times higher than that at T-1 = 561 degrees C, even for the same T-2 (682 degrees C). Additionally, the activation energy of interfacial oxidation was 0.27 eV, and independent of T1. This activation energy corresponds to the "no elementary step" proposed as the rate-limiting reaction in previous studies. These results can be explained using the unified Si oxidation reaction model mediated by point defect generation: high magnitude thermal strain is generated when the difference between T-2 and T-1 is large, and this strain generates point defects that become reaction sites for interfacial oxidation. Published by AIP Publishing.
机译：快速热氧化，其中将样品强烈加热到预设温度，用于在Si基板上生长氧化硅，同时避免杂质大量扩散到基板中。在先前提出的快速热氧化反应模型中，氧化速率仅由温度和O-2压力决定。因此，据信在预设温度下的氧化速率与初始衬底温度无关。在这项研究中，使用实时俄歇电子能谱观察到了Si（001）表面氧化之后的界面氧化反应。当在Si（001）表面氧化结束时将衬底温度从温度T-1提高到温度T-2时，界面氧化作用增强。结果，观察到界面氧化速率的强T-1和T-2依赖性。即使在相同的T-2（682℃）下，T-1 =室温下的界面氧化速率也比T-1 = 561℃时高10倍以上。此外，界面氧化的活化能为0.27 eV，与T1无关。该活化能对应于先前研究中提出的限速反应“无基本步骤”。这些结果可以使用由点缺陷产生介导的统一的Si氧化反应模型来解释：当T-2和T-1之间的差异较大时，会产生高强度的热应变，并且该应变会生成成为界面反应点的点缺陷。氧化。由AIP Publishing发布。

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