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New insights into the Mo/Cu(In,Ga)Se-2 interface in thin film solar cells: Formation and properties of the MoSe2 interfacial layer

机译:薄膜太阳能电池中Mo / Cu(In,Ga)Se-2界面的新见解:MoSe2界面层的形成和性质

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摘要

Being at the origin of an ohmic contact, the MoSe2 interfacial layer at the Mo/Cu(In,Ga)Se-2 interface in CIGS (Cu(In,Ga)Se-2 and related compounds) based solar cells has allowed for very high light-to-electricity conversion efficiencies up to 22.3%. This article gives new insights into the formation and the structural properties of this interfacial layer. Different selenization-steps of a Mo covered glass substrate prior to the CIGS deposition by co-evaporation led to MoSe2 interfacial layers with varying thickness and orientation, as observed by x-ray diffraction and atomic resolution transmission electron microscopy. A novel model based on the anisotropy of the Se diffusion coefficient in MoSe2 is proposed to explain the results. While the series resistance of finished CIGS solar cells is found to correlate with the MoSe2 orientation, the adhesion forces between the CIGS absorber layer and the Mo substrate stay constant. Their counter-intuitive non-correlation with the configuration of the MoSe2 interfacial layer is discussed and related to work from the literature. Published by AIP Publishing.
机译:作为欧姆接触的起点,基于CIGS的太阳能电池(Cu(In,Ga)Se-2和相关化合物)中Mo / Cu(In,Ga)Se-2界面处的MoSe2界面层允许高达22.3%的高光电转换效率。本文提供了对该界面层的形成和结构特性的新见解。通过X射线衍射和原子分辨率透射电子显微镜观察,在共蒸镀CIGS之前,覆盖Mo的玻璃基板的不同硒化步骤导致MoSe2界面层具有不同的厚度和方向。提出了一种基于MoSe2中Se扩散系数各向异性的新型模型来解释这一结果。虽然发现成品CIGS太阳能电池的串联电阻与MoSe2取向相关,但CIGS吸收层和Mo衬底之间的粘附力保持恒定。讨论了它们与MoSe2界面层构型的反直觉非相关性,并且与文献中的工作有关。由AIP Publishing发布。

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