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首页> 外文期刊>The journal of physical chemistry, A. Molecules, spectroscopy, kinetics, environment, & general theory >Two-photon excited fluorescence of nitrogen-vacancy centers in proton-irradiated type ib diamond
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Two-photon excited fluorescence of nitrogen-vacancy centers in proton-irradiated type ib diamond

机译：质子辐照的ib型金刚石中氮空位中心的双光子激发荧光

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摘要

Two-photon fluorescence spectroscopy of negatively charged nitrogen-vacancy [(N-V)(-)] centers in type Ib diamond single crystals have been studied with a picosecond (7.5 ps) mode-locked Nd:YVO4 laser operating at 1064 nm. The (N-V)(-) centers were produced by radiation damage of diamond using a 3 MeV proton beam, followed by thermal annealing at 800 degrees C. Prior to the irradiation treatment, infrared spectroscopy of the C-N vibrational modes at 1344 cm(-1) suggested a nitrogen content of 109 +/- 10 ppm. Irradiation and annealing of the specimen led to the emergence of a new absorption band peaking at similar to 560 nm. From a measurement of the integrated absorption intensity of the sharp zero-phonon line (637 nm) at liquid nitrogen temperature, we determined a (N-V)- density of (4.5 +/- 1.1) x 10(18) centers/cm(3) (or 25 +/- 6 ppm) for the substrate irradiated at a dose of 1 x 10(16) H+/cm(2). Such a high defect density allowed us to observe two-photon excited fluorescence and measure the corresponding fluorescence decay time. No significant difference in the spectral feature and fluorescence lifetime was observed between one-photon and two-photon excitations. Assuming that the fluorescence quantum yields are the same for both processes, a two-photon absorption cross section of sigma(TPA) = (0.45 +/- 0.23) x 10(-50) Cm-4 center dot s/photon at 1064 nm was determined for the (N-V)center based on its one-photon absorption cross section of sigma(OPA) = (3.1 +/- 0.8) x 10(-17) cm(2) at 532 nm. The material is highly photostable and shows no sign of photobleaching even under continuous two-photon excitation at a peak power density of 3 GW/cm(2) for 5 min.
机译：已经用工作在1064 nm的皮秒（7.5 ps）锁模Nd：YVO4激光研究了Ib型金刚石单晶中带负电荷的氮空位[（N-V）（-）]中心的双光子荧光光谱。 （NV）（-）中心是通过使用3 MeV质子束对金刚石进行辐射损伤，然后在800摄氏度下进行热退火而产生的。在进行辐射处理之前，对CN振动模的红外光谱在1344 cm（-1）处进行）建议氮含量为109 +/- 10 ppm。样品的辐照和退火导致出现了一个新的吸收带，该吸收带的峰值接近560 nm。通过测量液氮温度下零声子线（637 nm）的积分吸收强度，我们确定（NV）-密度为（4.5 +/- 1.1）x 10（18）个中心/ cm（3） ）（或25 +/- 6 ppm）（以1 x 10（16）H + / cm（2）的剂量照射）。如此高的缺陷密度使我们能够观察到双光子激发的荧光并测量相应的荧光衰减时间。在单光子和双光子激发之间，没有观察到光谱特征和荧光寿命的显着差异。假设两个过程的荧光量子产率相同，则在1064 nm处sigma（TPA）的双光子吸收截面=（0.45 +/- 0.23）x 10（-50）Cm-4中心点s /光子根据其在532 nm处的σ（OPA）=（3.1 +/- 0.8）x 10（-17）cm（2）的单光子吸收截面确定（NV）中心。该材料具有很高的光稳定性，即使在峰值功率密度3 GW / cm（2）持续5分钟的连续两光子激发下也没有光漂白的迹象。

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