Atypical quantum confinement effect in silicon nanowires

Sorokin PB; Avramov PV; Chernozatonskii LA; Fedorov DG; Ovchinnikov SG

首页> 外文期刊>The journal of physical chemistry, A. Molecules, spectroscopy, kinetics, environment, & general theory >Atypical quantum confinement effect in silicon nanowires

【24h】

Atypical quantum confinement effect in silicon nanowires

机译：硅纳米线中的非典型量子限制效应

获取原文

获取原文并翻译 | 示例

掌桥外文数据库（机构版） >>

开具论文收录证明 >>

文献代查 >>

页面导航

摘要
著录项
相似文献
相关主题

摘要

The quantum confinement effect (QCE) of linear junctions of silicon icosahedral quantum dots (IQD) and pentagonal nanowires (PNW) was studied using DFT and semiempirical AM1 methods. The formation of complex IQD/PNW structures leads to the localization of the HOMO and LUMO on different parts of the system and to a pronounced blue shift of the band gap; the typical QCE with a monotonic decrease of the band gap upon the system size breaks down. A simple one-electron one-dimensional Schrodinger equation model is proposed for the description and explanation of the unconventional quantum confinement behavior of silicon IQD/PNW systems. On the basis of the theoretical models, the experimentally discovered deviations from the typical QCE for nanocrystalline silicon are explained.

机译：利用DFT和半经验AM1方法研究了硅二十面体量子点（IQD）和五边形纳米线（PNW）线性结的量子约束效应（QCE）。复杂的IQD / PNW结构的形成导致HOMO和LUMO定位在系统的不同部分，并导致带隙出现明显的蓝移。随着系统尺寸的增加，带隙单调减小的典型QCE下降了。为了描述和解释硅IQD / PNW系统的非常规量子约束行为，提出了一个简单的一维一维Schrodinger方程模型。在理论模型的基础上，说明了从实验中发现的与典型纳米晶硅QCE的偏差。

著录项

来源
《The journal of physical chemistry, A. Molecules, spectroscopy, kinetics, environment, & general theory》 |2008年第40期|共10页
作者
Sorokin PB; Avramov PV; Chernozatonskii LA; Fedorov DG; Ovchinnikov SG;
展开▼
作者单位

展开▼
收录信息
原文格式 PDF
正文语种 eng
中图分类
关键词
ELECTRONIC-STRUCTURE; OPTICAL-PROPERTIES; SI; DENSITY; WIRES; EXCHANGE; ATOMS; DOTS;

机译：电子结构;光学性能;SI;密度;导线;交换;原子;点;

相似文献

外文文献
中文文献
专利

1. Atypical quantum confinement effect in silicon nanowires [J] . Sorokin PB, Avramov PV, Chernozatonskii LA, The journal of physical chemistry, A. Molecules, spectroscopy, kinetics, environment, & general theory . 2008,第40期

机译：硅纳米线中的非典型量子限制效应
2. Anisotropic and passivation-dependent quantum confinement effects in germanium nanowires: A comparison with silicon nanowires [J] . Jing MW, Ni M, Song W, The journal of physical chemistry, B. Condensed matter, materials, surfaces, interfaces & biophysical . 2006,第37期

机译：锗纳米线中各向异性和钝化相关的量子约束效应：与硅纳米线的比较
3. Quantum confinement effects on the harmful‐gas‐sensing properties of silicon nanowires [J] . de Santiago Francisco, Miranda álvaro, Trejo Alejandro, International Journal of Quantum Chemistry . 2018,第20期

机译：硅纳米线有害气体传感性能的量子监控效应
4. Variability in extremely narrow (∼2nm) silicon nanowire FETs induced by quantum confinement variation due to line width roughness [C] . Toshiro Hiramoto, Tomoko Mizutani, Takuya Saraya, IEEE International Conference on Solid-State and Integrated Circuit Technology . 2016

机译：由于线宽粗糙度导致的量子限制变化引起的极窄（〜2nm）硅纳米线FET的变异性
5. Quantum confinement effects in lithographic sub-5 nm Silicon nanowire fets and integration of si nanograting fet biosensors. [D] . Trivedi, Krutarth B. 2012

机译：在低于5 nm的硅纳米线光刻中的量子限制效应和si纳米栅FET生物传感器的集成。
6. Optimal Silicon Doping Layers of Quantum Barriers in the Growth Sequence Forming Soft Confinement Potential of Eight-Period In0.2Ga0.8N/GaN Quantum Wells of Blue LEDs [O] . Hsiang-Chen Wang, Meng-Chu Chen, Yen-Sheng Lin, 2017

机译：形成蓝色LED八周期In0.2Ga0.8N / GaN量子阱的软约束电势的生长顺序中的量子势垒的最佳硅掺杂层。
7. Impact of quantum confinement on transport and the electrostatic driven performance of silicon nanowire transistors at the scaling limit [O] . Al-Ameri, Talib, Georgiev, Vihar P., Sadi, Toufik, 2017

机译：量子限制对传输的影响以及硅纳米线晶体管在缩放极限下的静电驱动性能

Atypical quantum confinement effect in silicon nanowires

摘要

著录项

相似文献

相关主题

期刊订阅