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首页> 外文期刊>The journal of physical chemistry, A. Molecules, spectroscopy, kinetics, environment, & general theory >Isoelectronic Series of Oxygen Deficient Centers in Silica: Experimental Estimation of Homogeneous and Inhomogeneous Spectral Widths
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Isoelectronic Series of Oxygen Deficient Centers in Silica: Experimental Estimation of Homogeneous and Inhomogeneous Spectral Widths

机译：二氧化硅中缺氧中心的等电子系列：均匀和不均匀光谱宽度的实验估计

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摘要

We report nanosecond time-resolved photoluminescence measurements on the isoelectronic series of oxygen deficient centers in amorphous silica related to silicon, germanium and tin atoms, which are responsible of fluorescence activities at ～4 eV under excitation at ～5 eV. The dependence of the first moment of their emission band on time and that of the radiative decay lifetime on emission energy are analyzed within a theoretical model able to describe the effects introduced by disorder on the optical properties of the defects. We obtain separate estimates of the homogeneous and inhomogeneous contributions to the measured emission line width, and we derive homogeneous spectroscopic features of the investigated point defects (Huang—Rhys factor, homogeneous width, oscillator strength, vibrational frequency). The results point to a picture in which an oxygen deficient center localized on a heavier atom features a higher degree of inhomogeneity due to stronger local distortion of the surrounding matrix. For Si, Ge, and Sn related defects, the parameter A, able to quantify inhomogeneity, is 65, 78, and 90%, respectively.
机译：我们报告了与硅，锗和锡原子有关的非晶态二氧化硅中缺氧中心的等电子序列的纳秒时间分辨光致发光测量结果，这些中心负责在〜5 eV激发下〜4 eV的荧光活性。在能够描述由无序引入的缺陷对光学特性的影响的理论模型中，分析了它们的发射带的第一矩对时间的依赖性以及辐射衰减寿命对发射能量的依赖性。我们获得了对测得的发射线宽度的均质和非均质贡献的单独估计，并得出了所研究点缺陷的均质光谱特征（黄-Rhys因子，均质宽度，振荡器强度，振动频率）。结果指向一张图片，其中位于较重原子上的缺氧中心具有较高的不均匀性，这是由于周围矩阵的局部变形更强。对于与Si，Ge和Sn有关的缺陷，能够量化不均匀性的参数A分别为65％，78％和90％。

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