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Binary recombination of H_3 ~+ and D_3 ~+ ions with electrons in plasma at 50-230 K

机译:H_3〜+和D_3〜+离子与等离子体在50-230 K时的电子进行二元复合

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摘要

The results of an experimental study of the H_3 ~+ and D_3 ~+ ions recombination with electrons in afterglow plasmas in the temperature range 50-230 K are presented. A flowing afterglow apparatus equipped with a Langmuir probe was used to measure the evolution of the electron number density in the decaying plasma. The obtained values of the binary recombination rate coefficient are α_(binH3) ~+ = (6.0 ± 1.8) × 10~(-8)(300/T)~(0.36±0.09) cm ~3 s~(-1) for H_3 ~+ ions in the temperature range 80-300 K and α_(binD3) ~+ = (3.5 ± 1.1) × 10~(-8)(300/T)~(0.73±0.09) cm ~3 s~(-1) for D_3 ~+ ions in the temperature range 50-300 K. This is the first measurement of the binary recombination rate coefficient of H_3 ~+ and D _3 ~+ ions in a plasma experiment down to 50 K.
机译:给出了在50-230 K温度范围内余辉等离子体中H_3〜+和D_3〜+离子与电子复合的实验研究结果。使用配备有Langmuir探针的流动余辉仪来测量衰减等离子体中电子数密度的演变。二元复合率系数的获得值为α_(binH3)〜+ =(6.0±1.8)×10〜(-8)(300 / T)〜(0.36±0.09)cm〜3 s〜(-1) H_3〜+离子在80-300 K的温度范围内且α_(binD3)〜+ =(3.5±1.1)×10〜(-8)(300 / T)〜(0.73±0.09)cm〜3 s〜(- 1)对于温度范围为50-300 K的D_3〜+离子。这是在低至50 K的等离子体实验中首次测量H_3〜+和D _3〜+离子的二元复合速率系数。

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