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首页> 外文期刊>The journal of physical chemistry, B. Condensed matter, materials, surfaces, interfaces & biophysical >Effect of Annealing Temperature on Back Electron Transfer and Distribution of Deep Trap Sites in Dye-Sensitized TiO_2, Studied by Time-Resolved Infrared Spectroscopy
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Effect of Annealing Temperature on Back Electron Transfer and Distribution of Deep Trap Sites in Dye-Sensitized TiO_2, Studied by Time-Resolved Infrared Spectroscopy

机译：时间分辨红外光谱研究退火温度对染料敏化TiO_2中深陷阱区背电子转移和分布的影响

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摘要

The effect of annealing temperature on electron dynamics in Ru complex-sensitized TiO_2 films was studied by highly sensitive measurement of transient IR absorption. The amount of electron injection and the back electron transfer rate were not influenced to a large extent by annealing temperature, but the distribution of deep trap sites was considerably influenced. The difference in solar cell efficiency due to annealing temperature was mainly attributed to the difference in the nature of deep trap sites. By extending the probe light window from the mid-IR (1000-4000 cm~(-1)) to the near-IR (-10000 cm~(-1)) region, we investigated deep trap sites directly and found that electrons in deep trap sites have absorption in the near-IR region whose peak locates around 7500 cm~(-1). As a whole, the electron dynamics in the films annealed at higher than 400 ℃ were considerably different compared with those in the films annealed at lower than 400 ℃.
机译：通过对瞬态红外吸收的高灵敏度测量，研究了退火温度对Ru络合敏化的TiO_2薄膜中电子动力学的影响。电子注入量和后电子传输速率在很大程度上不受退火温度的影响，但是深陷阱位点的分布却受到很大影响。由于退火温度引起的太阳能电池效率的差异主要归因于深陷阱位点性质的差异。通过将探测光窗口从中红外（1000-4000 cm〜（-1））扩展到近红外（-10000 cm〜（-1））区域，我们直接研究了深陷阱的位置，发现电子在较深的俘获位点在近红外区域有吸收，其峰值位于7500 cm〜（-1）附近。总体而言，高于400℃退火的薄膜的电子动力学与低于400℃退火的薄膜的电子动力学显着不同。

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