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首页> 外文期刊>The journal of physical chemistry, B. Condensed matter, materials, surfaces, interfaces & biophysical >Chemical Modification of a Porous Silicon Surface Induced by Nitrogen Dioxide Adsorption
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Chemical Modification of a Porous Silicon Surface Induced by Nitrogen Dioxide Adsorption

机译:二氧化氮吸附诱导的多孔硅表面化学修饰

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The effect of gaseous and liquid nitrogen dioxide on the composition and electronic properties of porous silicon (PS) is investigated by means of optical spectroscopy and electron paramagnetic resonance.It is detected that the interaction process is weak and strong forms of chemisorption on the PS surface,and the process may be regarded as an actual chemical reaction between PS and NO_2.It is found that NO_2 adsorption consists in forming different surface nitrogen-containing molecular groups and dangling bonds of Si atoms (P_b-centers) as well as in oxidizing and hydrating the PS surface.Also observed are the formation of ionic complexes of Pb-centers with NO_2 molecules and the generation of free charge carriers (holes) in the volume of silicon nanocrystals forming PS.
机译:通过光谱学和电子顺磁共振研究了气态和液态二氧化氮对多孔硅(PS)的组成和电子性能的影响,发现在PS表面相互作用过程是弱的和强的化学吸附形式结果发现,NO_2的吸附主要包括形成不同的表面含氮分子基团和Si原子的悬空键(P_b中心)以及氧化和吸附。还观察到了Pb中心与NO_2分子的离子络合物的形成以及在形成PS的硅纳米晶体体积中自由电荷载流子(空穴)的产生。

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