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首页> 外文期刊>The journal of physical chemistry, C. Nanomaterials and interfaces >Interface Properties of Metal/Graphene Heterostructures Studied by Micro-Raman Spectroscopy
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Interface Properties of Metal/Graphene Heterostructures Studied by Micro-Raman Spectroscopy

机译：显微拉曼光谱研究金属/石墨烯异质结构的界面性质

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摘要

Studies are conducted for the influence of the interface formation of graphene with various transition metals on its vibrational properties by using confocal micro-Raman spectroscopy. Micrometer-scale heterostructures consisting of patterned regions of the single layer and multilayer graphene (SLG and MLG, hereafter) covered with and without metals on the same graphene sheet were fabricated by thin-film deposition on the graphene surface through a shadow mask. Comparative analysis for these two different regions (SLG and MLG) fabricated within an identical graphene sheet enables us to investigate the interactions at and the doping effect from the metal/graphene interface as a function of the layers number of graphene without the influence of the unintentional doping. Confirmed dependences of the peaks shifts of the Raman bands (D, G, and 2D bands) on the graphene layers number and metal species (Co, Ni, and Au) reveal that the interfacial interactions are dramatically different between single layer and multilayer graphenes. In the metal/MLG heterostructures, the Raman band shifts are reasonably attributed to carrier doping from metals. It is found that the type of the doped carriers (electrons or holes) is different between Co/MLG and Au/MLG, irrespective of almost the same work functions of Co and Au. These analyses also provide the effective thickness of carrier doping (2-3 graphene layers) from the interfaces. In the metal/SLG heterostructures, significant differences from the metal/MLG heterostructures were observed for the Raman parameters of the G and 2D bands. It is suggested that there exist strong interactions at the metal/SLG interfaces different from those at the metal/MLG interfaces.
机译：通过共聚焦显微拉曼光谱研究了石墨烯与各种过渡金属的界面形成对其振动性能的影响。通过在暗层上在石墨烯表面上进行薄膜沉积，制造了由单层的图案化区域和在同一石墨烯片上覆盖和不覆盖金属的多层石墨烯（以下称为SLG和MLG）组成的微米级异质结构。在相同的石墨烯片中制造的这两个不同区域（SLG和MLG）的比较分析使我们能够研究金属/石墨烯界面处的相互作用以及掺杂效应与石墨烯层数的关系，而不受非故意影响掺杂。证实的拉曼能带（D，G和2D能带）的峰移对石墨烯层数和金属种类（Co，Ni和Au）的依赖性揭示了单层石墨烯和多层石墨烯之间的界面相互作用显着不同。在金属/ MLG异质结构中，拉曼带移合理地归因于金属的载流子掺杂。发现Co / MLG和Au / MLG之间掺杂的载流子的类型（电子或空穴）是不同的，而与Co和Au的几乎相同的功函数无关。这些分析还提供了界面处载流子掺杂（2-3个石墨烯层）的有效厚度。在金属/ SLG异质结构中，对于G和2D带的拉曼参数，观察到与金属/ MLG异质结构的显着差异。建议在金属/ SLG界面存在与金属/ MLG界面不同的强相互作用。

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