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首页> 外文期刊>The journal of physical chemistry, C. Nanomaterials and interfaces >Facile Charge Propagation in CdS Quantum Dot Cells
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Facile Charge Propagation in CdS Quantum Dot Cells

机译：CdS量子点细胞中的电荷容易传播

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摘要

A photoactive electrode of cadmium sulfide (CdS) quantum dots and fullerene (C_(60)) nanowhiskers (NW), free of a wide-gap semiconducting oxide support, has been fabricated for the first time, by growing CdS quantum dots using the successive ionic layer adsorption and reaction (SILAR) method over a layer of C_(60) nanowhiskers. Enhanced excited electron injection efficiency from the CdS quantum dots to C_(60) nanowhiskers was ascertained on the basis of maximum fluorescence quenching and shortest emission decay lifetimes in the CdS/C_(60) (NW) electrode compared to conventional CdS/C_(60) and CdS electrodes. Conducting atomic force microscope (C-AFM) revealed the larger nanoscale electronic conductivity for the CdS/C_(60) (NW) electrode relative to CdS/C_(60) or neat CdS electrodes. Kelvin probe force microscopy (KPFM) furnished an insight into how the downshift of the quasi Fermi level toward more positive potentials in the C_(60) nanowhiskers as compared to neat C_(60), is capable of providing an additional driving force for rapid electron transport within the photoanode. Photoelectrochemical cells based on the CdS/C_(60) (NW) and CdS/C_(60) electrodes were formed by employing a thin film of carboxylate functionalized multiwalled carbon nanotubes (MWCNTs)/poly(dimethyldiallylammonium chloride) (PDDA) as the counter electrode. Rapid electron transport and high effective surface area of the C_(60) nanowhiskers manifested in higher photocurrents, photovoltage, and incident photon to current conversion efficiency (IPCE) for the cell based on the CdS/C_(60) (NW) electrode. The advantage of using MWCNT/PDDA electrode as the counter electrode was realized in terms of an overall enhancement in short circuit current (Jsc)> open-circuit voltage (V_(oc)), and IPCE attained for the CdS/C_(60) (NW)-MWCNT/PDDA cell as opposed to cells based on platinum (Pt) as the counter electrode. Our method of combining CdS quantum dots with C_(60) nanowhiskers to yield an electrode that is superior to C_(60)-based traditional electrodes on all counts is easily applicable to other visible light absorbing quantum dots and thus opens up exciting possibilities for a plethora of yet unexplored donor-acceptor architectures for high, performance photo-electrochemical solar cells.
机译：硫化镉（CdS）量子点和富勒烯（C_（60））纳米晶须（NW）的光活性电极，是通过连续生长CdS量子点而首次制造的，该电极不含宽间隙半导体氧化物载体C_（60）纳米晶须层上的离子层吸附和反应（SILAR）方法。与传统的CdS / C_（60）相比，CdS / C_（60）（NW）电极具有最大的荧光猝灭和最短的发射衰减寿命，可确定从CdS量子点到C_（60）纳米晶须的激发电子注入效率提高。 ）和CdS电极。导电原子力显微镜（C-AFM）揭示了CdS / C_（60）（NW）电极相对于CdS / C_（60）或纯CdS电极具有更大的纳米级电导率。开尔文探针力显微镜（KPFM）揭示了准费米能级向C_（60）纳米晶须与纯C_（60）相比向更正电位的下移如何能够为快速电子提供额外的驱动力在光电阳极内传输。基于CdS / C_（60）（NW）和CdS / C_（60）电极的光电化学电池是通过使用羧酸盐官能化的多壁碳纳米管（MWCNT）/聚二甲基二烯丙基氯化铵（PDDA）的薄膜形成的电极。 C_（60）纳米须晶的快速电子传输和高有效表面积表现为基于CdS / C_（60）（NW）电极的电池具有更高的光电流，光电压和入射光子电流转换效率（IPCE）。从整体提高短路电流（Jsc）>开路电压（V_（oc））以及CdS / C_（60）获得的IPCE方面，实现了使用MWCNT / PDDA电极作为对电极的优势（NW）-MWCNT / PDDA电池，而不是基于铂（Pt）作为对电极的电池。我们将CdS量子点与C_（60）纳米晶须结合使用以产生在所有数量上均优于基于C_（60）的传统电极的电极的方法很容易适用于其他吸收可见光的量子点，从而为大量尚未开发的高性能光电电化学太阳能电池的供体-受体结构。

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