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首页> 外文期刊>The journal of physical chemistry, C. Nanomaterials and interfaces >Atomic Hydrogen Activated TiO2 Nanocluster: DFT Calculations
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Atomic Hydrogen Activated TiO2 Nanocluster: DFT Calculations

机译:氢原子活化的TiO2纳米簇:DFT计算

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The reduction of TiO2 nanoparticle through interaction with H atom and characterization of resulting defect species with O2 molecule adsorption were investigated by DFT calculations in a molecular cluster approach. The isolated cluster Ti8O_(16) was used as a nanoparticle model. It was found that interaction between atomic hydrogen and every oxygen atom in Ti8O_(16) has the following features: (1) formation of stable OH group, (2) low activation energy of the process, and (3) appearance of reduced Ti~(3+) ion together with one corresponding d-type singly occupied level in the cluster's "band gap". Molecular hydrogen, in contrast with its atomic form, weakly interacts only with Ti atoms. Simulation of O2 adsorption on each Ti~(3+) ion of reduced Ti8O_(16)H clusters shows the following: (1) formation of stable molecular O_2~- species, (2) the process has no any energetic barrier, and (3) disappearance of Ti~(3+) defect center and corresponding d-type singly occupied level. The obtained results agree well with general experimental regularities of both H plasma TiO2 reduction and interaction of reduced TiO2 with oxygen. Specifically, calculations of g~tensor provide plausible quantitative description of Ti~(3+) and O_2~- paramagnetic species. Consistently the computational approach under consideration can be therefore applied to local surfaces phenomena associated with nanoscaled TiO2.
机译:通过分子簇方法中的DFT计算研究了通过与H原子的相互作用还原TiO2纳米颗粒以及通过O2分子吸附表征所得缺陷种类的特性。分离的团簇Ti 8 O_(16)用作纳米颗粒模型。发现Ti8O_(16)中原子氢与每个氧原子之间的相互作用具有以下特征:(1)形成稳定的OH基团;(2)该过程的活化能低;(3)出现还原的Ti〜 (3+)离子与团簇“带隙”中一个对应的d型单独占据的能级。分子氢与其原子形式相反,仅与Ti原子弱相互作用。在还原的Ti8O_(16)H团簇的每个Ti〜(3+)离子上O2吸附的模拟结果表明:(1)形成稳定的分子O_2〜-物种;(2)该过程没有任何高能垒,并且( 3)Ti〜(3+)缺陷中心消失,相应的d型单占据能级消失。所得结果与H等离子体TiO 2还原以及还原的TiO 2与氧气相互作用的一般实验规律非常吻合。特别地,g_tensor的计算提供了Ti〜(3+)和O_2〜-顺磁性物种的合理定量描述。因此,可以始终将所考虑的计算方法应用于与纳米级TiO2相关的局部表面现象。

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