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首页> 外文期刊>The journal of physical chemistry, C. Nanomaterials and interfaces >Study of CeO2 and Its Native Defects by Density Functional Theory with Repulsive Potential
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Study of CeO2 and Its Native Defects by Density Functional Theory with Repulsive Potential

机译:利用排斥势的密度泛函理论研究CeO2及其自然缺陷

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We investigated the native point defects in CeO2 by the density functional theory with repulsive potential (DFT+U) method and by use of a nonlinear core-corrected norm-conserving Ce pseudopotential. We find the neutral oxygen vacancy (V_O~0) in CeO2 to have a very low formation energy of only 0.39 eV in the O-poor limit. It is a deep donor with negative U behavior, stable only in its neutral and doubly positive states. The anion Frenkel defect is found to be the lowest energy disorder defect, with a formation energy of only 2.08 eV/defect site. These low formation energies arise, from the improved transferability of our Ce pseudopotential for its +3 and +4 valence states. The negative U behavior of V_o leads to excellent photocatalytic behavior, while the low formation energy of the anion Frenkel defect leads to a superior oxygen storage-and-release capability.
机译:我们通过具有排斥势的密度泛函理论(DFT + U)并利用非线性核校正的守恒范式Ce伪势研究了CeO2中的自然点缺陷。我们发现CeO2中的中性氧空位(V_O〜0)具有非常低的形成能,在O极差限度内仅为0.39 eV。它是具有负U行为的深层供体,仅在其中性和双重正态下稳定。发现阴离子Frenkel缺陷是最低的能量紊乱缺陷,其形成能仅为2.08 eV /缺陷位点。这些低形成能是由于我们的Ce伪电势对于+3和+4价态的转移能力提高而产生的。 V_o的负U行为导致出色的光催化行为,而阴离子Frenkel缺陷的低形成能导致优异的氧气存储和释放能力。

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